Reduction of threading edge dislocation density in n-type GaN by Si delta-doping

Journal of Crystal Growth

Volumn 286, Issue 2, 2006, Pages 255-258

  Pan, Y B ^a   Yang, Z J ^a   Chen, Z T ^a   Lu, Y ^a   Yu, T J ^a   Hu, X D ^a   Xu, K ^a   Zhang, G Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

A1. Threading dislocation; A3. Delta doping; Al. Rocking curve; B1. GaN thin films

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; SEMICONDUCTOR DOPING;

DELTA DOPING; GAN THIN FILMS; ROCKING CURVE; THREADING DISLOCATION;

THIN FILMS;

EID: 29344468436     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.09.015     Document Type: Article

References (13)

1. N.G. Weimann, and L.F. Eastman J. Appl. Phys. 83 1998 3656
2. Y. Kato, S. Kitamura, K. Hiramatsu, and N. Sawaki J. Crystal Growth 144 1994 133
3. O. Nam, M. Bremser, T.S. Zheleva, and R.F. Davis Appl. Phys. Lett. 71 1997 2638
4. T.S. Zheleva, S.A. Smith, D.B. Thomson, T. Gehrke, K.J. Linthicum, P. Rajagopal, E. Carlson, W.M. Ashmawi, and R.F. Davis MRS Int. J. Nitride Semicond. Res. 4S1 1999 G3.38
5. E.D. Bourret-Courchesne, S. Kellermann, K.M. Yu, M. Benamara, Z. Liliental-Weber, and J. Washburn Appl. Phys. Lett. 77 2000 3562
6. L.S. Wang, K.Y. Zang, S. Tripathy, and S.J. Chua Appl. Phys. Lett. 85 2004 5881
7. H. Lahrèche, P. Vennéguès, B. Beaumont, and P. Gibart J. Crystal Growth 205 1999 245
8. G.Y. Zhao, M. Adachi, H. Ishikawa, T. Egawa, M. Umeno, and T. Jimbo Appl. Phys. Lett. 77 2000 2195
9. O. Contreras, F.A. Ponce, J. Christen, A. Dadgar, and A. Krost Appl. Phys. Lett. 81 2002 4712
10. K.J. Lee, E.H. Shin, and K.Y. Lim Appl. Phys. Lett. 85 2004 1502
11. V. Srikant, J.S. Speck, and D.R. Clarke J. Appl. Phys. 82 1997 4286
12. W. Qian, M. Skowronski, M. De Graef, K. Doverspike, L.B. Rowland, and D.K. Gaskill Appl. Phys. Lett. 66 1995 1252
13. B. Heying, X.H. Wu, S. Keller, Y. Li, D. Kapolnek, B.P. Keller, S.P. DenBaars, and J.S. Specka Appl. Phys. Lett. 68 1996 643