Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

Applied Physics Letters

Volumn 80, Issue 17, 2002, Pages 3099-3101

  Aumer, M E ^a   Leboeuf, S F ^a   Moody, B F ^a   Bedair, S M ^a   Nam, K ^b   Lin, J Y ^b   Jiang, H X ^b  

^a North Carolina State University   (United States)

^b KANSAS STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALINGAN; CARRIER LOCALIZATION; COMPRESSIVE STRAIN; DEGREE OF LOCALIZATION; EMISSION ENERGIES; INGAN QW; LOCALIZED STATE; MODELING RESULTS; NON-RADIATIVE RECOMBINATIONS; OPTICAL BEHAVIOR; PHOTOLUMINESCENCE DECAY; PHOTOLUMINESCENCE EMISSION; QUANTUM WELL; QUANTUM WELL STRUCTURES; RECOMBINATION DYNAMICS; STRAIN EFFECT; TIME-RESOLVED PHOTOLUMINESCENCE; VARIABLE TEMPERATURE;

GALLIUM; LATTICE MISMATCH; PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICE STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79956060638     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1469219     Document Type: Article

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