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Materials Science and Engineering: B

Volumn 93, Issue 1-3, 2002, Pages 24-27

Investigation of GaN quantum dot stacking in multilayers with X-ray grazing incidence techniques

(5) Chamard, V a Metzger, T a Bellet Amalric, E b Daudin, B b Mariette, H b,c

a EUROPEAN SYNCHROTRON RADIATION FACILITY (France)

b CEA GRENOBLE (France)

c LIPHY (France)

Author keywords

Diffraction; Grazing incidence; Nitride; Quantum dots; Scattering; X ray

Indexed keywords

GALLIUM NITRIDE; LATTICE CONSTANTS; MULTILAYERS; SEMICONDUCTOR GROWTH; STACKING FAULTS; STRAIN; X RAY SCATTERING;

GRAZING INCIDENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037198548 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(02)00040-5 Document Type: Conference Paper

Times cited : (1)

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