Structural characterization of InGaN thin films and multiple quantum wells: An approach of combining various X-ray scattering methods

Physica B: Condensed Matter

Volumn 336, Issue 1-2, 2003, Pages 109-117

  Lee, H H ^a   Jang, H W ^a   Kim, D H ^a   Noh, D Y ^a   Yi, M S ^b   Tang, M ^c   Liang, K S ^c  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Kyungpook National University   (South Korea)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

Composition; InGaN; MQWs; X ray scattering

Indexed keywords

POISSON DISTRIBUTION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN MEASUREMENT; X RAY DIFFRACTION ANALYSIS; X RAY SCATTERING;

BRAGG REFLECTIONS;

THIN FILMS;

EID: 0038683295     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(03)00278-3     Document Type: Conference Paper

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