Interfacial structure and defect analysis of nonpolar ZnO films grown on R -plane sapphire by molecular beam epitaxy

Journal of Applied Physics

Volumn 103, Issue 8, 2008, Pages

  Venngus P ^a   Chauveau, J M ^a,b   Korytov, M ^a   Deparis, C ^a   Zuniga Perez, J ^a   Morhain, C ^a  

^a CNRS   (France)

^b UNIVERSITÉ CÔTE D'AZUR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

DEFECT ANALYSIS; EPITAXIAL RELATIONSHIPS; INTERFACIAL STRUCTURE; SAPPHIRE SUBSTRATES;

OXIDE FILMS;

EID: 43049105409     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2905220     Document Type: Article

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