Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots

Physical Review Letters

Volumn 85, Issue 8, 2000, Pages 1694-1697

  Kegel, I ^a   Metzger, T H ^a   Lorke, A ^a   Peisl, J ^a   Stangl, J ^b   Bauer, G ^b   Garcia J M ^c,d   Petroff, P M ^c  

^a UNIVERSITY OF MUNICH   (Germany)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c University of California   (United States)

^d INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

INTERDIFFUSION (SOLIDS); LATTICE CONSTANTS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; TOMOGRAPHY; X RAY DIFFRACTION ANALYSIS;

NANOMETER-SCALE RESOLUTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034251458     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.1694     Document Type: Article

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