Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers

MRS Internet Journal of Nitride Semiconductor Research

Volumn 6, Issue , 2001, Pages

  Stepanov, S ^a   Wang, W N ^a   Yavich, B S ^a,b   Bougrov, V ^b   Rebane, Y T ^b   Shreter, Y G ^b  

^a UNIVERSITY OF BATH   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; LIGHT REFLECTION; LIGHT SCATTERING; NITRIDES; PHOTOLUMINESCENCE; POISSON RATIO; RESONANT TUNNELING; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

BOWING PARAMETERS; BUFFER LAYERS; COMPRESSIVE STRAIN; ROOM TEMPERATURE (RT);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 3242813815     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/S1092578300000181     Document Type: Article

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