Determination of the chemical composition of distorted InGaN/GaN heterostructures from X-ray diffraction data

Journal of Physics D: Applied Physics

Volumn 32, Issue 10 A, 1999, Pages

  Schuster, M ^a   Gervais, P O ^b   Jobst, B ^a   Hosler W ^a   Averbeck, R ^a   Riechert, H ^a   Iberl, A ^c   Stommer R ^c  

^a SIEMENS AG   (Germany)

^b ECOLE POLYTECHNIQUE   (France)

^c BRUKER AXS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CHEMICAL ANALYSIS; COMPOSITION; ELASTICITY; HETEROJUNCTIONS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; THICKNESS MEASUREMENT;

GALLIUM NITRIDE; THEORY OF ELASTICITY; VEGARD RULE; X RAY REFLECTOMETRY;

X RAY DIFFRACTION ANALYSIS;

EID: 0032674144     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/10A/312     Document Type: Article

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