Reproducibility in X-ray reflectometry: Results from the first world-wide round-robin experiment

Journal of Applied Crystallography

Volumn 41, Issue 1, 2008, Pages 143-152

  Colombi, P ^a   Agnihotri, D K ^b   Asadchikov, V E ^c   Bontempi, E ^a   Bowen, D K ^d   Chang, C H ^e   Depero, L E ^a   Farnworth, M ^f   Fujimoto, T ^g   Gibaud, A ^h   Jergel, M ⁱ   Krumrey, M ^j   Lafford, T A ^d   Lamperti, A ^k   Ma, T ^l   Matyi, R J ^m   Meduna, M ⁿ   Milita, S ^o   Sakurai, K ^p   Shabel'Nikov, L ^q   Ulyanenkov, A ^r   Van Der Lee, A ^s   Wiemer, C ^t   more..

^a UNIVERSITY OF BRESCIA   (Italy)

^b Jordan Valley Semiconductors UK Ltd   (United Kingdom)

^c X ray Reflectivity of Institute of Crystallography RAS   (Russian Federation)

^d Bede plc   (United Kingdom)

^e Research Institute of Industrial Science and Technology (RIST)   (South Korea)

^f Pilkington Group Limited   (United Kingdom)

^g NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^h Faculté des Sciences   (France)

ⁱ INSTITUTE OF PHYSICS   (Slovakia)

^j PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^k DURHAM UNIVERSITY   (United Kingdom)

^l GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

^m STATE UNIVERSITY OF NEW YORK   (United States)

ⁿ MASARYK UNIVERSITY   (Czech Republic)

^o CNR   (Italy)

^p NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^q INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^r BRUKER AXS GMBH   (Germany)

^s UNIVERSITÉ DE MONTPELLIER   (France)

^t LABORATORIO MDM   (Italy)

more..

Author keywords

Layer structures; Round robin; X ray reflectometry

Indexed keywords

EID: 38349108536     PISSN: 00218898     EISSN: 16005767     Source Type: Journal    
DOI: 10.1107/S0021889807051904     Document Type: Article

References (21)

1. Als-Nielsen, J. D. & McMorrow, D. (2001). Elements of Modern X-ray Physics. Chichester: Wiley.
2. Balzar, D., Audebrand, N., Daymond, M. R., Fitch, A., Hewat, A., Langford, J. I., Le Bail, A., Louër, D., Masson, O., McCowan, C. N., Popa, N. C., Stephens, P. W. & Toby, B. H. (2004). J. Appl. Cryst. 37, 911-924.
3. Bontempi, E. (2004). Recent Res. Devel. Chem. Phys. 5, 461-488.
4. Bowen, D. K. (2001). Compd Semicond. 7, 72-75.
5. Bowen, D. K. & Deslattes, R. D. (2000). X-ray Metrology by Diffraction and Reflectivity, Characterization and Metrology for ULSI Technology, International Conference, edited by D. G. Seiler, A. C. Diebold, T. J. Shaffner, R. McDonald, W. M. Bullis, P. J. Smith & E. M. Secula, American Institute of Physics, p. 570.
6. Bowen, D. K. & Tanner, B. K. (2006). X-ray Metrology in Semiconductor Manufacturing. London: Taylor and Francis.
7. Daillant, J. & Gibaud, A. (1999). X-ray and Neutron Reflectivity: Principles and Applications. New York: Springer.
8. Hill, R. J. (1992). J. Appl. Cryst. 25, 589-610.
9. Kiessig, H. (1931a). Ann. Phys. Berlin, 10(6), 715-768.
10. Kiessig, H. (1931b). Ann. Phys. Berlin, 10(7), 769-788.
11. Krumrey, M., Hoffmann, M., Ulm, G., Hasche, K. & Thomsen-Schmidt, P. (2004). Thin Solid Films, 459, 241-244.
12. Lu, J. R., Lee, E. M. & Thomas, R. K. (1996). Acta Cryst. A52, 11-41.
13. Madsen, I. C., Scarlett, N. V. Y., Cranswick, L. M. D. & Lwin, T. (2001). J. Appl. Cryst. 34, 409-426.
14. Parratt, L. G. (1954). Phys. Rev. 95, 359-369.
15. Pietsch, U., Holy, V. & Baumbach, T. (2004). High-Resolution X-ray Scattering. From Thin Films to Lateral Nanostructures, pp. 31-51, 143-153. New York: Springer.
16. Salah, F., Harzallah, B. & van der Lee, A. (2007). J. Appl. Cryst. 40, 813-819.
17. Sanyal, M. K. (1998). Radiat. Phys. Chem. 51, 4-6, 487-495.
18. Scarlett, N. V. Y., Madsen, I. C., Cranswick, L. M. D., Lwin, T., Groleau, E., Stephenson, G., Aylmore, M. & Agron-Olshina, N. (2002). J. Appl. Cryst. 35, 383-400.
19. Ulyanenkov, A. (2004). Proc. SPIE, 5536, 1-15.
20. Windt, D. L. (1998). Comput. Phys. 12, 360. (http://www.esrf.fr/computing/scientific/xop/.)
21. Wormington, M., Panaccione, C., Matney, K. M. & Bowen, D. K. (1999). Philos. Trans. R. Soc. Lond. Ser. A, 357, 2827-2848.