Bulk and homoepitaxial GaN-growth and characterisation

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 153-158

  Porowski, Sylwester ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

GaN; High N2 pressure; Homoepitaxy; Solution crystal growth

Indexed keywords

CHEMICAL POLISHING; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

GALLIUM NITRIDE; MECHANO-CHEMICAL POLISHING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032089895     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00193-6     Document Type: Article

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