Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and x-ray diffraction

Nanotechnology

Volumn 18, Issue 46, 2007, Pages

  Kret, S ^a   Dluzewski P ^a   Szczepanska A ^a   Zak, M ^a   Czernecki, R ^b   Krysko M ^c   Leszczynski M ^b   Maciejewski, G ^d  

^a INSTITUTE OF PHYSICS   (Poland)

^b TOPGAN LTD   (Poland)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^d INSTITUTE OF FUNDAMENTAL TECHNOLOGICAL RESEARCH   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

INDIUM DISTRIBUTION; INDIUM DISTRIBUTION MEASUREMENTS; MONOCRYSTALLINE SUBSTRATES;

QUANTUM WELL LASERS;

CRYSTALLIN; INDIUM;

ARTICLE; CONCENTRATION (PARAMETERS); ELECTRON BEAM; FINITE ELEMENT ANALYSIS; LASER; MEASUREMENT; PHYSICAL STRESS; PRIORITY JOURNAL; QUANTUM CHEMISTRY; SIMULATION; SURFACE PROPERTY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 36048949024     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/46/465707     Document Type: Article

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