Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth

Applied Physics Letters

Volumn 93, Issue 14, 2008, Pages

  Kim, Kwang Choong ^a   Schmidt, Mathew C ^a   Wu, Feng ^a   McLaurin, Melvin B ^a   Hirai, Asako ^a   Nakamura, Shuji ^a   Denbaars, Steven P ^a   Speck, James S ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEFECT DENSITY; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM NITRIDE; INDUSTRIAL CHEMICALS; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON COMPOUNDS; VAPORS;

EXTENDED DEFECTS; GAN FILMS; M-PLANE; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; NON-POLAR; NONPOLAR M-PLANE; SIC SUBSTRATES; SIDEWALL LATERAL EPITAXIAL OVERGROWTH;

GALLIUM ALLOYS;

EID: 53649110611     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2908978     Document Type: Article

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