Surface energetics, pit formation, and chemical ordering in InGaN alloys

Applied Physics Letters

Volumn 74, Issue 16, 1999, Pages 2319-2321

  Northrup, J E ^a   Romano, L T ^a   Neugebauer, J ^b  

^a PALO ALTO RESEARCH CENTER   (United States)

^b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; INTERFACIAL ENERGY; MOLECULAR STRUCTURE; NITRIDES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS;

INDIUM GALLIUM NITRIDE; PIT FORMATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032621080     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123837     Document Type: Article

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