Zinc-blende AIN and GaN under pressure: Structural, electronic, elastic and piezoelectric properties

Semiconductor Science and Technology

Volumn 19, Issue 11, 2004, Pages 1220-1231

  Kanoun, M B ^a,c   Goumri Said, S ^b   Merad, A E ^a,c   Merad, G ^a   Cibert, J ^c   Aourag, H ^d  

^a UNIVERSITY OF TLEMCEN   (Algeria)

^b UNIVERSITÉ DE BOURGOGNE   (France)

^c LIPHY   (France)

^d UNIVERSITÉ DE TECHNOLOGIE DE BELFORT MONTBÉLIARD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CORRELATION METHODS; GALLIUM NITRIDE; HYDROSTATIC PRESSURE; LATTICE CONSTANTS; LIGHT EMITTING DIODES; PIEZOELECTRICITY; PROBABILITY DENSITY FUNCTION; SILICON CARBIDE; ZINC;

BANDGAP; GENERALIZED DENSITY APPROXIMATION (GGA); LOCAL DENSITY APPROXIMATION (LDA);

ALUMINUM NITRIDE;

EID: 9144225018     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/11/002     Document Type: Article

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