Effects of impurities on the lattice parameters of GaN

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 16, 2003, Pages

  Van de Walle, Chris G ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; GALLIUM NITRIDE; MAGNESIUM; NITROGEN DERIVATIVE; OXYGEN; UNCLASSIFIED DRUG;

ARTICLE; CALCULATION; CRYSTAL; DENSITY; ELECTRONICS; SEMICONDUCTOR;

EID: 4344611975     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.165209     Document Type: Article

References (26)

1. G.S. Cargill III, J. Angilello, and K.L. Kavanagh, Phys. Rev. Lett. 61, 1748 (1988).
2. J. Krüger, G.S. Sudhir, D. Corlatan, Y. Cho, Y. Kim, R. Klockenbrink, S. Rouvimov, Z. Lilienthal-Weber, C. Kisielowksi, M. Rubin, and E.R. Weber, in Nitride Semiconductors, edited by F.A. Ponce, S.P. DenBaars, B.K. Meyer, S. Nakamura, and S. Strite, MRS Symposia Proceedings No. 482 (Materials Research Society, Pittsburgh, 1998), p. 447.
3. C. Kisielowski, in Gallium Nitride (GaN) II, edited by J.I. Pankove and T.D. Moustakas, Semiconductors and Semimetals Vol. 57, Treatise Editors R.K. Willardson and E.R. Weber (Academic Press, Boston, 1998), p. 275.
4. J.W. Ager III, T. Suski, S. Ruvimov, J. Krueger, G. Conti, E.R. Weber, M.D. Bremser, R.F. Davis, and C.P. Kuo, in III-V Nitrides, edited by F.A. Ponce, T. D. Moustakas, I. Akasaki, and B. A. Monemar, MRS Symposia Proceedings No. 449 (Materials Research Society, Pittsburgh, 1997) p. 779.
5. S. Ruvimov, Z. Liliental-Weber, T. Suski, J.W. Ager III, J. Washburn, J. Krueger, C. Kisielowski, E.R. Weber, H. Amano, and I. Akasaki, Appl. Phys. Lett. 69, 990 (1996).
6. I. Lee, I. Choi, C. Lee, E. Shin, D. Kim, S.K. Noh, S. Son, K. Lim, and H.J. Lee, J. Appl. Phys. 83, 5787 (1998).
7. L.T. Romano, C.G. Van de Walle, J.W. Ager III, W. Gtz, and R.S. Kern, J. Appl. Phys. 87, 7745 (2000).
8. P. Perlin, T. Suski, A. Polian, J.C. Chervin, W. Knap, J. Camassel, I. Grzegory, S. Porowski, and J.W. Erickson, in III-V Nitrides (Ref. 4), p. 519.
9. M. Bockstedte, A. Kley, J. Neugebauer, and M. Scheffler, Comput. Phys. Commun. 107, 187 (1997).
10. P. Hohenberg and W. Kohn, Phys. Rev. 136, B864 (1964).
11. W. Kohn and L.J. Sham, Phys. Rev. 140, A1133 (1965).
12. C.G. Van de Walle, C. Stampfl, and J. Neugebauer, J. Cryst. Growth 189/190, 505 (1998).
13. C. Stampfl and C.G. Van de Walle, Phys. Rev. B 59, 5521 (1999).
14. C. Stampfl and C.G. Van de Walle, Phys. Rev. B 65, 155212 (2002).
15. N. Troullier and J.L. Martins, Phys. Rev. B 43, 1993 (1991).
16. S.G. Louie, S. Froyen, and M.L. Cohen, Phys. Rev. B 26, 1738 (1982).
17. C.K. Shih, W.E. Spicer, W.A. Harrison, and A. Sher, Phys. Rev. B 31, 1139 (1985).
18. E.A. Kraut and W.A. Harrison, J. Vac. Sci. Technol. B3, 1267 (1985).
19. I. Yokota, J. Phys. Soc. Jpn. 18, 1487 (1964).
20. C.G. Van de Walle, Phys. Rev. B 39, 1871 (1989).
21. C.G. Van de Walle and J. Neugebauer, Appl. Phys. Lett. 70, 2577 (1997).
22. S. Porowski, J. Cryst. Growth 189/190, 153 (1998).
23. A.S. Alexandrov, V.N. Grebenev, E.A. Mazur, M. Leszczynski, H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, J. Jun, S. Porowski, K. Pakula, J.M. Baranowski, C.T. Foxon, and T.S. Cheng, Appl. Phys. Lett. 69, 73 (1996).
24. C.G. Van de Walle, M.D. McCluskey, C.P. Master, L.T. Romano, and N.M. Johnson, Mater. Sci. Eng., B59, 274 (1999).
25. Z. Liliental-Weber, M. Benamara, J. Washburn, I. Grzegory, and S. Porowski, Phys. Rev. Lett. 83, 2370 (1999).
26. C.G. Van de Walle, S. Limpijumnong, and J. Neugebauer, Phys. Rev. B 63, 245205 (2001).