SCOPUS 정보 검색 플랫폼

Volumn 235, Issue 1-4, 2002, Pages 103-110

X-ray studies of As-doped GaN grown by plasma-assisted molecular beam epitaxy

(11) Li, T a Staddon, C R a Novikov, S V a,b Fewster, P F c Widdowson, A c Andrew, N L c Kidd, P c Harrison, I a Winser, A a Liao, Y d Foxon, C T a

a UNIVERSITY OF NOTTINGHAM (United Kingdom)

b IOFFE INSTITUTE (Russian Federation)

c MALVERN INSTRUMENTS LTD (United Kingdom)

d UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

A1. High resolution X ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ARSENIC; GALLIUM NITRIDE; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

PLASMA ASSISTED-MOLECULAR BEAM EPITAXY (PA-MBE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036467092 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01830-9 Document Type: Article

Times cited : (7)

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