-
1
-
-
0000836443
-
Atomic layer deposition, in
-
ed. H. S. Nalwa, Academic Press, San Diego, CA
-
M. Ritala andM. Leskelä, Atomic layer deposition, In: Handbook of Thin Film Materials, ed. H. S. Nalwa, Academic Press, San Diego, CA, p. 1, 103 (2001).
-
(2001)
Handbook of Thin Film Materials
, vol.1
, pp. 103
-
-
Ritala, M.1
Leskelä, M.2
-
2
-
-
76549091893
-
Industrial application of atomic layer deposition
-
M. Ritala and J. Niinistö, Industrial application of atomic layer deposition, ECS Trans., 25(8), 641 (2009).
-
(2009)
ECS Trans.
, vol.25
, Issue.8
, pp. 641
-
-
Ritala, M.1
Niinistö, J.2
-
3
-
-
0343585404
-
Overturning and anchoring of monolayers
-
I. Langmuir, Overturning and anchoring of monolayers, Science, 87, 493 (1938).
-
(1938)
Science
, vol.87
, pp. 493
-
-
Langmuir, I.1
-
4
-
-
21744444606
-
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminium/water process
-
R. L. Puurunen, Surface chemistry of atomic layer deposition: A case study for the trimethylaluminium/water process, J. Appl. Phys., 97(12), 121301 (2005).
-
(2005)
J. Appl. Phys.
, vol.97
, Issue.12
, pp. 121301
-
-
Puurunen, R.L.1
-
5
-
-
31944449472
-
The molecular layering nanotechnology: Basis and application
-
A. A. Malygin, The molecular layering nanotechnology: Basis and application, J. Ind. Eng. Chem., 12(1), 1 (2006).
-
(2006)
J. Ind. Eng. Chem.
, vol.12
, Issue.1
, pp. 1
-
-
Malygin, A.A.1
-
11
-
-
84855584986
-
Spatial atomic layer deposition: A route towards further industrialization of atomic layer deposition
-
P. Poodt, D. C. Cameron, S. M. George, V. Kuznetsov, G. N. Parsons, F. Roozeboom, G. Sundaram, and A. Vermeer, Spatial atomic layer deposition: A route towards further industrialization of atomic layer deposition, J. Vac. Sci. Technol. A., 30(1), 010802 (2012).
-
(2012)
J. Vac. Sci. Technol. A.
, vol.30
, Issue.1
, pp. 010802
-
-
Poodt, P.1
Cameron, D.C.2
George, S.M.3
Kuznetsov, V.4
Parsons, G.N.5
Roozeboom, F.6
Sundaram, G.7
Vermeer, A.8
-
12
-
-
17544394135
-
Solution deposition on thin solid compound films by a successive ionic-layer adsorption and reaction process
-
Y. F. Nicolau, Solution deposition on thin solid compound films by a successive ionic-layer adsorption and reaction process, Appl. Surf. Sci., 22-23, 1061 (1985).
-
(1985)
Appl. Surf. Sci.
, vol.22-23
, pp. 1061
-
-
Nicolau, Y.F.1
-
13
-
-
84879556638
-
Successive ionic layer adsorption and reaction (SILAR) and related sequential solution-phase deposition techniques
-
ed. D. B. Mitzi, Wiley, Hoboken, NJ
-
S. Lindroos, and M. Leskelä, Successive ionic layer adsorption and reaction (SILAR) and related sequential solution-phase deposition techniques, In: Solution Processing of InorganicMaterials, ed. D. B. Mitzi, Wiley, Hoboken, NJ, p. 239 (2009).
-
(2009)
Solution Processing of InorganicMaterials
, pp. 239
-
-
Lindroos, S.1
Leskelä, M.2
-
14
-
-
75649140552
-
Atomic layer deposition: An overview
-
S. M. George, Atomic layer deposition: An overview, Chem. Rev., 110(1), 111 (2010).
-
(2010)
Chem. Rev.
, vol.110
, Issue.1
, pp. 111
-
-
George, S.M.1
-
15
-
-
79960537802
-
Surface chemistry of copper(I) acetamidinates in connection with atomic layer deposition (ALD) processes
-
Q. Ma, H. Guo, R. G. Gordon, and F. Zaera, Surface chemistry of copper(I) acetamidinates in connection with atomic layer deposition (ALD) processes, Chem. Mater., 23, 3325 (2011).
-
(2011)
Chem. Mater.
, vol.23
, pp. 3325
-
-
Ma, Q.1
Guo, H.2
Gordon, R.G.3
Zaera, F.4
-
16
-
-
79953731364
-
In situ x-ray fluorescence measurements during atomic layer deposition: Nucleation and growth of TiO2 on planar substrates and in nanoporous films
-
J. Dendooven, S. P. Sree, K. D. Keyser, D. Deduytsche, J. A. Martens, K. F. Ludwig, and C. Detavernier, In situ x-ray fluorescence measurements during atomic layer deposition: Nucleation and growth of TiO2 on planar substrates and in nanoporous films, J. Phys. Chem. C., 115, 6605 (2011).
-
(2011)
J. Phys. Chem. C.
, vol.115
, pp. 6605
-
-
Dendooven, J.1
Sree, S.P.2
Keyser, K.D.3
Deduytsche, D.4
Martens, J.A.5
Ludwig, K.F.6
Detavernier, C.7
-
17
-
-
79959357998
-
In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates
-
K. Devloo-Casier, J. Dendooven, K. F. Ludwig, G. Lekens, J. D'Haen, and C. Detavernier, In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates, Appl. Phys. Lett., 98, 231905 (2011).
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 231905
-
-
Devloo-Casier, K.1
Dendooven, J.2
Ludwig, K.F.3
Lekens, G.4
D'Haen, J.5
Detavernier, C.6
-
18
-
-
77953014672
-
Genesis and evolution of surface species during Pt atomic layer deposition on oxide supports characterized by in situ XAFS analysis and water-gas shift reaction
-
W. Setthapun, W. D. Williams, S. M. Kim, H. Feng, J. W. Elam, F. A. Rabuffetti, K. P. Poeppelmeier, P. C. Stair, E. A. Stach, F. H. Ribeiro, J. T. Miller, and C. L. Marshall, Genesis and evolution of surface species during Pt atomic layer deposition on oxide supports characterized by in situ XAFS analysis and water-gas shift reaction, J. Phys. Chem. C., 114(21), 9758 (2010).
-
(2010)
J. Phys. Chem. C.
, vol.114
, Issue.21
, pp. 9758
-
-
Setthapun, W.1
Williams, W.D.2
Kim, S.M.3
Feng, H.4
Elam, J.W.5
Rabuffetti, F.A.6
Poeppelmeier, K.P.7
Stair, P.C.8
Stach, E.A.9
Ribeiro, F.H.10
Miller, J.T.11
Marshall, C.L.12
-
19
-
-
33746863663
-
Atomic layer deposition of In2O3 using cyclopentadienyl indium: A new synthetic route to transparent conducting oxide films
-
J. W. Elam, A. B. F. Martinson, M. J. Pellin, and J. T. Hupp, Atomic layer deposition of In2O3 using cyclopentadienyl indium: A new synthetic route to transparent conducting oxide films, Chem. Mater., 18(15), 3571 (2006).
-
(2006)
Chem. Mater.
, vol.18
, Issue.15
, pp. 3571
-
-
Elam, J.W.1
Martinson, A.B.F.2
Pellin, M.J.3
Hupp, J.T.4
-
20
-
-
77951250075
-
Atomic layer deposition of Ir-Pt alloy films
-
S. T. Christensen and J. W. Elam, Atomic layer deposition of Ir-Pt alloy films, Chem. Mater., 22(8), 2517 (2010).
-
(2010)
Chem. Mater.
, vol.22
, Issue.8
, pp. 2517
-
-
Christensen, S.T.1
Elam, J.W.2
-
21
-
-
74249122465
-
Reaction mechanism studies on atomic layer deposition of Nb2O5 from Nb(OEt)5 and water
-
K. Knapas, A. Rahtu, and M. Ritala, Reaction mechanism studies on atomic layer deposition of Nb2O5 from Nb(OEt)5 and water, Langmuir, 26(2), 848 (2010).
-
(2010)
Langmuir
, vol.26
, Issue.2
, pp. 848
-
-
Knapas, K.1
Rahtu, A.2
Ritala, M.3
-
22
-
-
52649138379
-
In situ reaction mechanism studies on atomic layer deposition of ZrO2 from (CpMe)2Zr(OMe)Me and water or ozone
-
K. Knapas and M. Ritala, In situ reaction mechanism studies on atomic layer deposition of ZrO2 from (CpMe)2Zr(OMe)Me and water or ozone, Chem. Mater., 20(17), 5698 (2008).
-
(2008)
Chem. Mater.
, vol.20
, Issue.17
, pp. 5698
-
-
Knapas, K.1
Ritala, M.2
-
23
-
-
20444380758
-
GaPO4 sensors for gravimetric monitoring during atomic layer deposition at high temperatures
-
J. W. Elam and M. J. Pellin, GaPO4 sensors for gravimetric monitoring during atomic layer deposition at high temperatures, Anal. Chem., 77(11), 3531 (2005).
-
(2005)
Anal. Chem.
, vol.77
, Issue.11
, pp. 3531
-
-
Elam, J.W.1
Pellin, M.J.2
-
25
-
-
79958840947
-
In situ reaction mechanism studies on atomic layer deposition of Ir and IrO2 from Ir(acac)3
-
K. Knapas and M. Ritala, In situ reaction mechanism studies on atomic layer deposition of Ir and IrO2 from Ir(acac)3, Chem. Mater., 23, 2766 (2011).
-
(2011)
Chem. Mater.
, vol.23
, pp. 2766
-
-
Knapas, K.1
Ritala, M.2
-
26
-
-
33751385818
-
An IR and NMR study of the chemisorption of TiCl4 on silica
-
S. Haukka, E.-L. Lakomaa, and A. Root, An IR and NMR study of the chemisorption of TiCl4 on silica, J. Phys. Chem., 97, 5085 (1993).
-
(1993)
J. Phys. Chem.
, vol.97
, pp. 5085
-
-
Haukka, S.1
Lakomaa, E.-L.2
Root, A.3
-
27
-
-
63649098537
-
In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition
-
E. Langereis, S. B. S. Heil, H. C. M. Knoops, W. Keuning, M. C. M. van de Sanden, and W. M. M. Kessels, In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition, J. Phys. D., 42, 073001 (2009).
-
(2009)
J. Phys. D.
, vol.42
, pp. 073001
-
-
Langereis, E.1
Heil, S.B.S.2
Knoops, H.C.M.3
Keuning, W.4
De Van Sanden, M.M.C.5
Kessels, W.M.M.6
-
28
-
-
0001628877
-
Atomic layer epitaxy for producing EL-thin films
-
T. Suntola, J. Antson, A. Pakkala, and S. Lindfors, Atomic layer epitaxy for producing EL-thin films, SID 80 Dig., 11, 108 (1980).
-
(1980)
SID 80 Dig.
, vol.11
, pp. 108
-
-
Suntola, T.1
Antson, J.2
Pakkala, A.3
Lindfors, S.4
-
29
-
-
0001464652
-
Cadmium sulfide thin films grown by atomic layer epitaxy
-
A. Rautiainen, Y. Koskinen, J. Skarp, and S. Lindfors, Cadmium sulfide thin films grown by atomic layer epitaxy, Mater. Res. Soc. Symp. Proc., 222, 263 (1991).
-
(1991)
Mater. Res. Soc. Symp. Proc.
, vol.222
, pp. 263
-
-
Rautiainen, A.1
Koskinen, Y.2
Skarp, J.3
Lindfors, S.4
-
30
-
-
21744434246
-
Self-limiting monolayer epitaxy of wide gap II-VI superlattices
-
W. Faschinger, P. Juza, S. Ferreira, H. Zajicek, A. Pesek, H. Sitter, and K. Lischka, Self-limiting monolayer epitaxy of wide gap II-VI superlattices, Thin Solid Films, 225, 270 (1993).
-
(1993)
Thin Solid Films
, vol.225
, pp. 270
-
-
Faschinger, W.1
Juza, P.2
Ferreira, S.3
Zajicek, H.4
Pesek, A.5
Sitter, H.6
Lischka, K.7
-
31
-
-
0342272406
-
Photoluminescence properties of ZnSe single crystalline films grown by atomic layer epitaxy
-
T. Yao, T. Takeda, and R. Watanuki, Photoluminescence properties of ZnSe single crystalline films grown by atomic layer epitaxy, Appl. Phys. Lett., 48(23), 1615 (1986).
-
(1986)
Appl. Phys. Lett.
, vol.48
, Issue.23
, pp. 1615
-
-
Yao, T.1
Takeda, T.2
Watanuki, R.3
-
32
-
-
51249165853
-
Atomic layer epitaxy of nitrogendoped ZnSe
-
Y. Takemura and M. Konagai, Atomic layer epitaxy of nitrogendoped ZnSe, J. Electron. Mater., 22(5), 437 (1993).
-
(1993)
J. Electron. Mater.
, vol.22
, Issue.5
, pp. 437
-
-
Takemura, Y.1
Konagai, M.2
-
33
-
-
0030392623
-
Development of Cu(InGa)Se2 thin film solar cells with Cd-free buffer layers
-
M. Konagai, Y. Ohtake, and T. Okamoto, Development of Cu(InGa)Se2 thin film solar cells with Cd-free buffer layers, Mater. Res. Soc. Symp. Proc., 426, 153 (1996).
-
(1996)
Mater. Res. Soc. Symp. Proc.
, vol.426
, pp. 153
-
-
Konagai, M.1
Ohtake, Y.2
Okamoto, T.3
-
34
-
-
0033328951
-
Monocrystalline films of sphalerite-type ZnSe grown by atomic layer epitaxy in a gas flow system
-
A. Szszerbakow, E. Dynowska, K. Swiatek, and M. Godlewski, Monocrystalline films of sphalerite-type ZnSe grown by atomic layer epitaxy in a gas flow system, J. Cryst. Growth, 207, 148 (1999).
-
(1999)
J. Cryst. Growth
, vol.207
, pp. 148
-
-
Szszerbakow, A.1
Dynowska, E.2
Swiatek, K.3
Godlewski, M.4
-
35
-
-
0037403124
-
Origin of white color light emission in ALD-grown ZnSe
-
M. Godlewski, E. Guziewicz, K. Kopalko, E. Lusakowska, E. Dynowska, M. M. Godlewski, E. M. Goldys, and M. R. Phillips, Origin of white color light emission in ALD-grown ZnSe, J. Lumin., 102-103, 455 (2003).
-
(2003)
J. Lumin.
, vol.102-103
, pp. 455
-
-
Godlewski, M.1
Guziewicz, E.2
Kopalko, K.3
Lusakowska, E.4
Dynowska, E.5
Godlewski, M.M.6
Goldys, E.M.7
Phillips, M.R.8
-
36
-
-
0022584217
-
Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100) GaAs
-
T. Yao and T. Takeda, Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100) GaAs, Appl. Phys. Lett., 48(2), 160 (1986).
-
(1986)
Appl. Phys. Lett.
, vol.48
, Issue.2
, pp. 160
-
-
Yao, T.1
Takeda, T.2
-
37
-
-
0001687227
-
Atomic layer epitaxial growth of ZnSe, ZnTe and ZnSe-ZnTe strainedlayer superlattices
-
S. Dosho, Y. Takemura, M. Konagai, and K. Takahanshi, Atomic layer epitaxial growth of ZnSe, ZnTe and ZnSe-ZnTe strainedlayer superlattices, J. Appl. Phys., 66(6), 2597 (1989).
-
(1989)
J. Appl. Phys.
, vol.66
, Issue.6
, pp. 2597
-
-
Dosho, S.1
Takemura, Y.2
Konagai, M.3
Takahanshi, K.4
-
38
-
-
0001354071
-
Selflimiting growth of zinc chalcogenides and their superlattices
-
M. Konagai, Y. Takemura, K. Yamasaki, and K. Takahanshi, Selflimiting growth of zinc chalcogenides and their superlattices, Thin Solid Films, 225, 256 (1993).
-
(1993)
Thin Solid Films
, vol.225
, pp. 256
-
-
Konagai, M.1
Takemura, Y.2
Yamasaki, K.3
Takahanshi, K.4
-
39
-
-
0018985030
-
A study of ZnTe films grown on glass substrates using an atomic layer evaporation method
-
M. Ahonen and M. Pessa, A study of ZnTe films grown on glass substrates using an atomic layer evaporation method, Thin Solid Films, 65, 301 (1980).
-
(1980)
Thin Solid Films
, vol.65
, pp. 301
-
-
Ahonen, M.1
Pessa, M.2
-
40
-
-
0026104821
-
Selflimiting growth in atomic layer epitaxy of ZnTe
-
Y. Takemura, H. Nakanishi, M. Konagai, and K. Takahashi, Selflimiting growth in atomic layer epitaxy of ZnTe, Jpn. J. Appl. Phys., 30(2B), L246 (1991).
-
(1991)
Jpn. J. Appl. Phys.
, vol.30
, Issue.2 B
-
-
Takemura, Y.1
Nakanishi, H.2
Konagai, M.3
Takahashi, K.4
-
41
-
-
0344007911
-
Growth and characterization of CdTe-ZnTe shortperiod superlattices
-
F. Hauzenberger, W. Faschinger, P. Juza, A. Pesek, K. Lischka, and H. Sitter, Growth and characterization of CdTe-ZnTe shortperiod superlattices, Thin Solid Films, 225, 265 (1993).
-
(1993)
Thin Solid Films
, vol.225
, pp. 265
-
-
Hauzenberger, F.1
Faschinger, W.2
Juza, P.3
Pesek, A.4
Lischka, K.5
Sitter, H.6
-
42
-
-
0031546826
-
Reflection mass spectrometry studies on UHV ALE of Cd1-xZnxTe (0?x?1) compounds
-
J. T. Sadowski and M. A. Herman, Reflection mass spectrometry studies on UHV ALE of Cd1-xZnxTe (0?x?1) compounds, Appl. Surf. Sci., 112, 148 (1997).
-
(1997)
Appl. Surf. Sci.
, vol.112
, pp. 148
-
-
Sadowski, J.T.1
Herman, M.A.2
-
43
-
-
0020834627
-
Atomic layer epitaxy and characterization of CdTe films grown on CdTe (110) substrates
-
M. Pessa, P. Huttunen, and M. A. Herman, Atomic layer epitaxy and characterization of CdTe films grown on CdTe (110) substrates, J. Appl. Phys., 54(10), 6047 (1983).
-
(1983)
J. Appl. Phys.
, vol.54
, Issue.10
, pp. 6047
-
-
Pessa, M.1
Huttunen, P.2
Herman, M.A.3
-
44
-
-
11644286431
-
Cadmium telluride thin films grown by atomic layer epitaxy
-
A. Kytökivi, Y. Koskinen, A. Rautiainen, and J. Skarp, Cadmium telluride thin films grown by atomic layer epitaxy, Mater. Res. Soc. Symp. Proc., 222, 269 (1991).
-
(1991)
Mater. Res. Soc. Symp. Proc.
, vol.222
, pp. 269
-
-
Kytökivi, A.1
Koskinen, Y.2
Rautiainen, A.3
Skarp, J.4
-
45
-
-
0001459822
-
Ultra high vacuum atomic layer epitaxy of CdTe
-
H. Sitter and W. Faschinger, Ultra high vacuum atomic layer epitaxy of CdTe, Thin Solid Films, 225, 250 (1993).
-
(1993)
Thin Solid Films
, vol.225
, pp. 250
-
-
Sitter, H.1
Faschinger, W.2
-
46
-
-
0023166089
-
Mass spectrometry study of ZnS atomic layer epitaxy process
-
J. Hyvärinen, M. Sonninen, and R. Törnqvist, Mass spectrometry study of ZnS atomic layer epitaxy process, J. Cryst. Growth, 86, 695 (1988).
-
(1988)
J. Cryst. Growth
, vol.86
, pp. 695
-
-
Hyvärinen, J.1
Sonninen, M.2
Törnqvist, R.3
-
47
-
-
0027647147
-
Improved CdTe layers on GaAs and Si using atomic layer epitaxy
-
W.-S. Wang, H. Ehsani, and I. Bhat, Improved CdTe layers on GaAs and Si using atomic layer epitaxy, J. Electron. Mater., 22(8), 873 (1993).
-
(1993)
J. Electron. Mater.
, vol.22
, Issue.8
, pp. 873
-
-
Wang, W.-S.1
Ehsani, H.2
Bhat, I.3
-
48
-
-
0028762003
-
Surface reaction mechanism in MOMBLE-ALE of ZnSe and CdSe as determined by a new in-situ optical probing method
-
A. Yoshikawa, M. Kobayashi, and S. Tokita, Surface reaction mechanism in MOMBLE-ALE of ZnSe and CdSe as determined by a new in-situ optical probing method, Appl. Surf. Sci., 82/83, 316 (1994).
-
(1994)
Appl. Surf. Sci.
, vol.82-83
, pp. 316
-
-
Yoshikawa, A.1
Kobayashi, M.2
Tokita, S.3
-
49
-
-
84990696131
-
Growth kinetics in MOMBLE-ALE of ZnSe and CdSe as determined by a new in-situ optical probing method
-
A. Yoshikawa, M. Kobayashi, and S. Tokita, Growth kinetics in MOMBLE-ALE of ZnSe and CdSe as determined by a new in-situ optical probing method, Phys. Status Solidi B, 187, 315 (1995).
-
(1995)
Phys. Status Solidi B
, vol.187
, pp. 315
-
-
Yoshikawa, A.1
Kobayashi, M.2
Tokita, S.3
-
50
-
-
0035673331
-
In situ quadrupolemass spectrometry and quartz crystal microbalance studies on the atomic layer deposition of titanium dioxide from titanium tetrachloride and water
-
R. Matero, A. Rahtu, and M. Ritala, In situ quadrupolemass spectrometry and quartz crystal microbalance studies on the atomic layer deposition of titanium dioxide from titanium tetrachloride and water, Chem. Mater., 13(12), 4506 (2001).
-
(2001)
Chem. Mater.
, vol.13
, Issue.12
, pp. 4506
-
-
Matero, R.1
Rahtu, A.2
Ritala, M.3
-
51
-
-
0029264144
-
Morphology and structure of TiO2 thin films grown by atomic layer deposition
-
J. Aarik, A. Aidla, T. Uustare, and V. Sammelselg, Morphology and structure of TiO2 thin films grown by atomic layer deposition, J. Cryst. Growth, 148, 268 (1995).
-
(1995)
J. Cryst. Growth
, vol.148
, pp. 268
-
-
Aarik, J.1
Aidla, A.2
Uustare, T.3
Sammelselg, V.4
-
52
-
-
0030400393
-
Control of thin film structure by reactant pressure in atomic layer deposition of TiO2
-
J. Aarik, A. Aidla, V. Sammelselg, H. Siimon, and T. Uustare, Control of thin film structure by reactant pressure in atomic layer deposition of TiO2, J. Cryst. Growth, 169, 496 (1996).
-
(1996)
J. Cryst. Growth
, vol.169
, pp. 496
-
-
Aarik, J.1
Aidla, A.2
Sammelselg, V.3
Siimon, H.4
Uustare, T.5
-
53
-
-
0034513072
-
Anomalous effect of temperature on atomic layer deposition of titanium dioxide
-
J. Aarik, A. Aidla, H. Mändar, and V. Sammelselg, Anomalous effect of temperature on atomic layer deposition of titanium dioxide, J. Cryst. Growth, 220, 531 (2000).
-
(2000)
J. Cryst. Growth
, vol.220
, pp. 531
-
-
Aarik, J.1
Aidla, A.2
Mändar, H.3
Sammelselg, V.4
-
54
-
-
0035282191
-
Atomic layer deposition of titanium dioxide from TiCl4 and H2O: Investigation of growth mechanism
-
J. Aarik, A. Aidla, H. Mändar, and T. Uustare, Atomic layer deposition of titanium dioxide from TiCl4 and H2O: Investigation of growth mechanism, Appl. Surf. Sci., 172, 148 (2001).
-
(2001)
Appl. Surf. Sci.
, vol.172
, pp. 148
-
-
Aarik, J.1
Aidla, A.2
Mändar, H.3
Uustare, T.4
-
55
-
-
1842423017
-
TiO2 atomic layer deposition on ZrO2 particles using alternating exposures of TiCl4 and H2O
-
J. D. Ferguson, A. R. Yoder, A. W. Weimer, and S. M. George, TiO2 atomic layer deposition on ZrO2 particles using alternating exposures of TiCl4 and H2O, Appl. Surf. Sci., 226, 393 (2004).
-
(2004)
Appl. Surf. Sci.
, vol.226
, pp. 393
-
-
Ferguson, J.D.1
Yoder, A.R.2
Weimer, A.W.3
George, S.M.4
-
56
-
-
0031547030
-
Atomic layer deposition in traveling-wave reactor: In situ diagnostics by optical reflection
-
A. Rosental, P. Adamson, A. Gerst, H. Koppel, and A. Tarre, Atomic layer deposition in traveling-wave reactor: In situ diagnostics by optical reflection, Appl. Surf. Sci., 112, 82 (1997).
-
(1997)
Appl. Surf. Sci.
, vol.112
, pp. 82
-
-
Rosental, A.1
Adamson, P.2
Gerst, A.3
Koppel, H.4
Tarre, A.5
-
57
-
-
0032166098
-
TiO2 thin films by atomic layer deposition: A case of uneven growth at low temperature
-
V. Sammelselg, A. Rosental, A. Tarre, L. Niinistö, K. Heiskanen, K. Ilmonen, L.-S. Johansson, and T. Uustare, TiO2 thin films by atomic layer deposition: A case of uneven growth at low temperature, Appl. Surf. Sci., 134, 78 (1998).
-
(1998)
Appl. Surf. Sci.
, vol.134
, pp. 78
-
-
Sammelselg, V.1
Rosental, A.2
Tarre, A.3
Niinistö, L.4
Heiskanen, K.5
Ilmonen, K.6
Johansson, L.-S.7
Uustare, T.8
-
58
-
-
0032651715
-
Surface of TiO2 during atomic layer deposition as determined by incremental dielecric reflection
-
A. Rosental, A. Tarre, P. Adamson, A. Gerst, A. Kasikov, and A. Niilisk, Surface of TiO2 during atomic layer deposition as determined by incremental dielecric reflection, Appl. Surf. Sci., 142, 204 (1999).
-
(1999)
Appl. Surf. Sci.
, vol.142
, pp. 204
-
-
Rosental, A.1
Tarre, A.2
Adamson, P.3
Gerst, A.4
Kasikov, A.5
Niilisk, A.6
-
59
-
-
0034934522
-
Atomic-scale optical monitoring of the initial growth of TiO2 thin films
-
A. Niilisk, A. Rosental, A. Gerst, V. Sammelselg, and T. Uustare, Atomic-scale optical monitoring of the initial growth of TiO2 thin films, Proc. SPIE, 4318, 72 (2001).
-
(2001)
Proc. SPIE
, vol.4318
, pp. 72
-
-
Niilisk, A.1
Rosental, A.2
Gerst, A.3
Sammelselg, V.4
Uustare, T.5
-
60
-
-
17944391887
-
Comparative study of low-temperature chloride atomic-layer chemical vapor deposition of TiO2 and SnO2
-
A. Tarre, A. Rosental, V. Sammelselg, and T. Uustare, Comparative study of low-temperature chloride atomic-layer chemical vapor deposition of TiO2 and SnO2, Appl. Surf. Sci., 175-176, 111 (2001).
-
(2001)
Appl. Surf. Sci.
, vol.175-176
, pp. 111
-
-
Tarre, A.1
Rosental, A.2
Sammelselg, V.3
Uustare, T.4
-
61
-
-
0036092065
-
Reaction mechanism studies on the zirconium chloride-water atomic layer deposition process
-
A. Rahtu and M. Ritala, Reaction mechanism studies on the zirconium chloride-water atomic layer deposition process, J. Mater. Chem., 12, 1484 (2002).
-
(2002)
J. Mater. Chem.
, vol.12
, pp. 1484
-
-
Rahtu, A.1
Ritala, M.2
-
62
-
-
0037012516
-
Growth kinetics and structure formation of ZrO2 thin films in chloride-based atomic layer deposition process
-
J. Aarik, A. Aidla, H. Mändar, T. Uustare, and V. Sammelselg, Growth kinetics and structure formation of ZrO2 thin films in chloride-based atomic layer deposition process, Thin Solid Films, 408, 97 (2002).
-
(2002)
Thin Solid Films
, vol.408
, pp. 97
-
-
Aarik, J.1
Aidla, A.2
Mändar, H.3
Uustare, T.4
Sammelselg, V.5
-
63
-
-
33744521607
-
Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films
-
J. Aarik, A. Aidla, A. Kasikov, H. Mändar, R. Rammula, and V. Sammelselg, Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films, Appl. Surf. Sci., 252, 5723 (2006).
-
(2006)
Appl. Surf. Sci.
, vol.252
, pp. 5723
-
-
Aarik, J.1
Aidla, A.2
Kasikov, A.3
Mändar, H.4
Rammula, R.5
Sammelselg, V.6
-
64
-
-
0032653080
-
Influence of substrate temperature on atomic layer growth and properties of HfO2 thin films
-
J. Aarik, A. Aidla, A.-A. Kiisler, T. Uustare, and V. Sammelselg, Influence of substrate temperature on atomic layer growth and properties of HfO2 thin films, Thin Solid Films, 340, 110 (1999).
-
(1999)
Thin Solid Films
, vol.340
, pp. 110
-
-
Aarik, J.1
Aidla, A.2
Kiisler, A.-A.3
Uustare, T.4
Sammelselg, V.5
-
65
-
-
73949100837
-
Etching of Nb2O5 thin films by NbCl5
-
K. Knapas, A. Rahtu, and M. Ritala, Etching of Nb2O5 thin films by NbCl5, Chem. Vap. Deposition, 15, 269 (2009).
-
(2009)
Chem. Vap. Deposition
, vol.15
, pp. 269
-
-
Knapas, K.1
Rahtu, A.2
Ritala, M.3
-
66
-
-
0028758871
-
In situ characterization of ALE growth by reagent pulse delay times in a flow-type reactor
-
J. Aarik, A. Aidla, and K. Kukli, In situ characterization of ALE growth by reagent pulse delay times in a flow-type reactor, Appl. Surf. Sci., 75, 180 (1994).
-
(1994)
Appl. Surf. Sci.
, vol.75
, pp. 180
-
-
Aarik, J.1
Aidla, A.2
Kukli, K.3
-
67
-
-
0028547046
-
Deposition and etching of tantalum oxide films in atomic layer epitaxy process
-
J. Aarik, A. Aidla, K. Kukli, and T. Uustare, Deposition and etching of tantalum oxide films in atomic layer epitaxy process, J. Cryst. Growth, 144, 116 (1994).
-
(1994)
J. Cryst. Growth
, vol.144
, pp. 116
-
-
Aarik, J.1
Aidla, A.2
Kukli, K.3
Uustare, T.4
-
68
-
-
0000097220
-
Properties of tantalum oxide thin films grown by atomic layer deposition
-
K. Kukli, J. Aarik, A. Aidla, O. Kohan, T. Uustare, and V. Sammelselg, Properties of tantalum oxide thin films grown by atomic layer deposition, Thin Solid Films, 260, 135 (1995).
-
(1995)
Thin Solid Films
, vol.260
, pp. 135
-
-
Kukli, K.1
Aarik, J.2
Aidla, A.3
Kohan, O.4
Uustare, T.5
Sammelselg, V.6
-
69
-
-
0007218713
-
Reactivities of TaCl5 and H2O as precursors for atomic layer deposition
-
H. Siimon and J. Aarik, Reactivities of TaCl5 and H2O as precursors for atomic layer deposition, J. Phys. IV, 5, C5-277 (1995).
-
(1995)
J. Phys. IV
, vol.5
-
-
Siimon, H.1
Aarik, J.2
-
70
-
-
0030380571
-
Mechanisms of suboxide growth and etching in atomic layer deposition of tantalum oxide from TaCl5 and H2O
-
J. Aarik, K. Kukli, A. Aidla, and L. Pung, Mechanisms of suboxide growth and etching in atomic layer deposition of tantalum oxide from TaCl5 and H2O, Appl. Surf. Sci., 103, 331 (1996).
-
(1996)
Appl. Surf. Sci.
, vol.103
, pp. 331
-
-
Aarik, J.1
Kukli, K.2
Aidla, A.3
Pung, L.4
-
71
-
-
0025683726
-
Properties of amorphous Al2O3 films grown by ALE
-
J. Aarik, A. Aidla, A. Jaek, A.-A. Kiisler, and A.-A. Tammik, Properties of amorphous Al2O3 films grown by ALE, Acta Polytech. Scand., Chem. Technol. Metall. Ser., 195, 201 (1990).
-
(1990)
Acta Polytech. Scand., Chem. Technol. Metall. Ser.
, vol.195
, pp. 201
-
-
Aarik, J.1
Aidla, A.2
Jaek, A.3
Kiisler, A.-A.4
Tammik, A.-A.5
-
72
-
-
0028761995
-
Atomic layer controlled deposition of SiO2 and Al2O3 using ABAB. . . binary reaction sequence chemistry
-
S. M. George, O. Sneh, A. C. Dillon, M. L. Wise, A. W. Ott, L. A. Okada, and J. D. Way, Atomic layer controlled deposition of SiO2 and Al2O3 using ABAB. . . binary reaction sequence chemistry, Appl. Surf. Sci., 82/83, 460 (1994).
-
(1994)
Appl. Surf. Sci.
, vol.82-83
, pp. 460
-
-
George, S.M.1
Sneh, O.2
Dillon, A.C.3
Wise, M.L.4
Ott, A.W.5
Okada, L.A.6
Way, J.D.7
-
73
-
-
0034511163
-
Atomic layer deposition of SiO2 films on BN particles using sequential surface reactions
-
J. D. Ferguson, A. W. Weimer, and S. M. George, Atomic layer deposition of SiO2 films on BN particles using sequential surface reactions, Chem. Mater., 12(11), 3472 (2000).
-
(2000)
Chem. Mater.
, vol.12
, Issue.11
, pp. 3472
-
-
Ferguson, J.D.1
Weimer, A.W.2
George, S.M.3
-
74
-
-
33847666848
-
Mechanism of pyridinecatalyzed SiO2 atomic layer deposition studied by fourier transform infrared spectroscopy
-
Y. Du, X. Du, and S. M. George, Mechanism of pyridinecatalyzed SiO2 atomic layer deposition studied by fourier transform infrared spectroscopy, J. Phys. Chem. C, 111(1), 219 (2007).
-
(2007)
J. Phys. Chem. C
, vol.111
, Issue.1
, pp. 219
-
-
Du, Y.1
Du, X.2
George, S.M.3
-
75
-
-
0028762116
-
NbCl5 as a precursor in atomic layer epitaxy
-
K.-E. Elers, M. Ritala, M. Leskelä, and E. Rauhala, NbCl5 as a precursor in atomic layer epitaxy, Appl. Surf. Sci., 82/83, 468 (1994).
-
(1994)
Appl. Surf. Sci.
, vol.82-83
, pp. 468
-
-
Elers, K.-E.1
Ritala, M.2
Leskelä, M.3
Rauhala, E.4
-
76
-
-
0000467434
-
Integration of a quadrupole mass spectrometer and a quartz crystal microbalance for in situ characterization of atomic layer deposition processes in flow type reactors
-
A. Rahtu and M. Ritala, Integration of a quadrupole mass spectrometer and a quartz crystal microbalance for in situ characterization of atomic layer deposition processes in flow type reactors, Electrochem. Soc. Proc., 2000-13, 105 (2000).
-
(2000)
Electrochem. Soc. Proc. 2000-13
, pp. 105
-
-
Rahtu, A.1
Ritala, M.2
-
77
-
-
0002179435
-
Reaction mechanism studies on titanium isopropoxide-water atomic layer deposition process
-
A. Rahtu and M. Ritala, Reaction mechanism studies on titanium isopropoxide-water atomic layer deposition process, Chem. Vap. Deposition, 8(1), 21 (2002).
-
(2002)
Chem. Vap. Deposition
, vol.8
, Issue.1
, pp. 21
-
-
Rahtu, A.1
Ritala, M.2
-
78
-
-
0034229297
-
Titanium isopropoxide as a precursor for atomic layer deposition: Characterization of titanium dioxide growth process
-
J. Aarik, A. Aidla, T. Uustare, M. Ritala, and M. Leskelä, Titanium isopropoxide as a precursor for atomic layer deposition: Characterization of titanium dioxide growth process, Appl. Surf. Sci., 161, 385 (2000).
-
(2000)
Appl. Surf. Sci.
, vol.161
, pp. 385
-
-
Aarik, J.1
Aidla, A.2
Uustare, T.3
Ritala, M.4
Leskelä, M.5
-
79
-
-
0034848603
-
In situ characterization of atomic layer deposition of SrTiO3
-
A. Rahtu, T. Hänninen, and M. Ritala, In situ characterization of atomic layer deposition of SrTiO3, J. Phys. IV France, 11, Pr3-923 (2001).
-
(2001)
J. Phys. IV France
, vol.11
-
-
Rahtu, A.1
Hänninen, T.2
Ritala, M.3
-
80
-
-
0343390442
-
In situ characterization of atomic layer deposition processes by a mass spectrometer
-
M. Ritala, M. Juppo, K. Kukli, A. Rahtu, and M. Leskelä, In situ characterization of atomic layer deposition processes by a mass spectrometer, J. Phys. IV France, 9, Pr8-1021 (1999).
-
(1999)
J. Phys. IV France
, vol.9
-
-
Ritala, M.1
Juppo, M.2
Kukli, K.3
Rahtu, A.4
Leskelä, M.5
-
81
-
-
0034839628
-
In situ mass spectrometry study on atomic layer deposition from metal (Ti, Ta and Nb) ethoxides and water
-
A. Rahtu, K. Kukli, and M. Ritala, In situ mass spectrometry study on atomic layer deposition from metal (Ti, Ta, and Nb) ethoxides and water, Chem. Mater., 13(3), 817 (2001).
-
(2001)
Chem. Mater.
, vol.13
, Issue.3
, pp. 817
-
-
Rahtu, A.1
Kukli, K.2
Ritala, M.3
-
82
-
-
0033690095
-
Characterization of titanium dioxide atomic layer growth from titanium ethoxide and water
-
J. Aarik, A. Aidla, V. Sammelselg, T. Uustare, M. Ritala, and M. Leskelä, Characterization of titanium dioxide atomic layer growth from titanium ethoxide and water, Thin Solid Films, 370, 163 (2000).
-
(2000)
Thin Solid Films
, vol.370
, pp. 163
-
-
Aarik, J.1
Aidla, A.2
Sammelselg, V.3
Uustare, T.4
Ritala, M.5
Leskelä, M.6
-
83
-
-
0002304054
-
Identification of alcohol adsorption sites on alumina
-
E. C. DeCanio, V. P. Nero, and J. W. Bruno, Identification of alcohol adsorption sites on ? -alumina, J. Catal., 135, 444 (1992).
-
(1992)
J. Catal.
, vol.135
, pp. 444
-
-
Decanio, E.C.1
Nero, V.P.2
Bruno, J.W.3
-
84
-
-
0002924211
-
The effects of bulk titania crystal structure on the adsorption and reaction of aliphatic alcohols
-
V. S. Lusvardi, M. A. Barteau, and W. E. Farneth, The effects of bulk titania crystal structure on the adsorption and reaction of aliphatic alcohols, J. Catal., 153, 41 (1995).
-
(1995)
J. Catal.
, vol.153
, pp. 41
-
-
Lusvardi, V.S.1
Barteau, M.A.2
Farneth, W.E.3
-
85
-
-
0001256236
-
Characterization of the acidic properties of niobia-containing aerogels with [O- 18]ethanol dehydration
-
E. C. DeCanio, V. P. Nero, and E. I. Ko, Characterization of the acidic properties of niobia-containing aerogels with [O- 18]ethanol dehydration, J. Catal., 146, 317 (1994).
-
(1994)
J. Catal.
, vol.146
, pp. 317
-
-
Decanio, E.C.1
Nero, V.P.2
Ko, E.I.3
-
86
-
-
0002404915
-
Reactions of methanol on TiO2(001) single crystal surfaces
-
K. S. Kim and M. A. Barteau, Reactions of methanol on TiO2(001) single crystal surfaces, Surf. Sci., 223, 13 (1989).
-
(1989)
Surf. Sci.
, vol.223
, pp. 13
-
-
Kim, K.S.1
Barteau, M.A.2
-
87
-
-
0037885666
-
Thermal decomposition of methanol adsorbed on alumina
-
T. Matsushima and J. M. White, Thermal decomposition of methanol adsorbed on alumina, J. Catal., 44, 183 (1976).
-
(1976)
J. Catal.
, vol.44
, pp. 183
-
-
Matsushima, T.1
White, J.M.2
-
88
-
-
0031546947
-
In situ study of atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC2H5)5 and H2O
-
K. Kukli, J. Aarik, A. Aidla, H. Siimon, M. Ritala, and M. Leskelä, In situ study of atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC2H5)5 and H2O, Appl. Surf. Sci., 112, 236 (1997).
-
(1997)
Appl. Surf. Sci.
, vol.112
, pp. 236
-
-
Kukli, K.1
Aarik, J.2
Aidla, A.3
Siimon, H.4
Ritala, M.5
Leskelä, M.6
-
89
-
-
11144289175
-
Evaluation of new aminoalkoxide precursors for atomic layer deposition: Growth of zirconium dioxide thin films and reaction mechanism studies
-
R. Matero, M. Ritala, M. Leskelä, T. Sajavaara, A. C. Jones, and J. L. Roberts, Evaluation of new aminoalkoxide precursors for atomic layer deposition: Growth of zirconium dioxide thin films and reaction mechanism studies, Chem. Mater., 16(26), 5630 (2004).
-
(2004)
Chem. Mater.
, vol.16
, Issue.26
, pp. 5630
-
-
Matero, R.1
Ritala, M.2
Leskelä, M.3
Sajavaara, T.4
Jones, A.C.5
Roberts, J.L.6
-
90
-
-
4344702865
-
ALD of SiO2 at room temperature using TEOS and H2O with NH3 as the catalyst
-
J. D. Ferguson, E. R. Smith, A. W. Weimer, and S. M. George, ALD of SiO2 at room temperature using TEOS and H2O with NH3 as the catalyst, J. Electrochem. Soc., 151(8), G528 (2004).
-
(2004)
J. Electrochem. Soc.
, vol.151
, Issue.8
-
-
Ferguson, J.D.1
Smith, E.R.2
Weimer, A.W.3
George, S.M.4
-
91
-
-
0034294316
-
Atomic layer epitaxy of vanadium oxide thin films and electrochemical behavior in presence of lithium ions
-
J. C. Badot, S. Ribes, E. B. Yousfi, V. Vivier, J. P. Pereira-Ramos, N. Baffier, and D. Lincot, Atomic layer epitaxy of vanadium oxide thin films, and electrochemical behavior in presence of lithium ions, Electrochem. Solid-State Lett., 3(10), 485 (2000).
-
(2000)
Electrochem. Solid-State Lett.
, vol.3
, Issue.10
, pp. 485
-
-
Badot, J.C.1
Ribes, S.2
Yousfi, E.B.3
Vivier, V.4
Pereira-Ramos, J.P.5
Baffier, N.6
Lincot, D.7
-
92
-
-
84860741345
-
AndM. Ritala, in situ reaction mechanism studies on the new tBuN M(NEt2)3- Water and tBuN M(NEt2)3-Ozone (M Nb, Ta) atomic layer deposition processes
-
Y. Tomczak, K. Knapas, M. Sundberg, M. Leskelä, andM. Ritala, In situ reaction mechanism studies on the new tBuN M(NEt2)3- Water and tBuN M(NEt2)3-Ozone (M Nb, Ta) atomic layer deposition processes, Chem. Mater., 24(9), 1555 (2012).
-
(2012)
Chem. Mater.
, vol.24
, Issue.9
, pp. 1555
-
-
Tomczak, Y.1
Knapas, K.2
Sundberg, M.3
Leskelä, M.4
-
93
-
-
0036799255
-
Atomic layer deposition of hafnium and zirconium oxides using metal amide precursors
-
D. M. Hausmann, E. Kim, J. Becker, and R. G. Gordon, Atomic layer deposition of hafnium and zirconium oxides using metal amide precursors, Chem. Mater., 14(10), 4350 (2002).
-
(2002)
Chem. Mater.
, vol.14
, Issue.10
, pp. 4350
-
-
Hausmann, D.M.1
Kim, E.2
Becker, J.3
Gordon, R.G.4
-
94
-
-
27344444688
-
Insitu infrared spectroscopy and density functional theory modeling of hafnium alkylamine adsorption on Si-OH and Si-H surfaces
-
M J. Kelly, J. H. Han, C. B. Musgrave, and G. N. Parsons, Insitu infrared spectroscopy and density functional theory modeling of hafnium alkylamine adsorption on Si-OH and Si-H surfaces, Chem. Mater., 17(21), 5305 (2005).
-
(2005)
Chem. Mater.
, vol.17
, Issue.21
, pp. 5305
-
-
Kelly, M.J.1
Han, J.H.2
Musgrave, C.B.3
Parsons, G.N.4
-
95
-
-
63149158625
-
In-situ probing of atomic layer deposition processes using infrared and near infrared spectroscopy
-
A. O'Mahony, I. M. Povey, and M. E. Pemble, In-situ probing of atomic layer deposition processes using infrared and near infrared spectroscopy, ECS Trans., 16(4), 349 (2008).
-
(2008)
ECS Trans.
, vol.16
, Issue.4
, pp. 349
-
-
O'Mahony, A.1
Povey, I.M.2
Pemble, M.E.3
-
96
-
-
77953711053
-
Infrared and near-infrared spectroscopic probing of atomic layer deposition processes
-
A. O'Mahony, M. E. Pemble, and I. M. Povey, Infrared and near-infrared spectroscopic probing of atomic layer deposition processes, J. Mol. Struct., 976, 324 (2010).
-
(2010)
J. Mol. Struct.
, vol.976
, pp. 324
-
-
O'Mahony, A.1
Pemble, M.E.2
Povey, I.M.3
-
97
-
-
77955909528
-
Tetrakis(dimethylamido)hafnium adsorption and reaction on hydrogen terminated Si(100) surfaces
-
K. Li, S. Li, N. Li, D. A. Dixon, and T. N. Klein, Tetrakis(dimethylamido)hafnium adsorption and reaction on hydrogen terminated Si(100) surfaces, J. Phys. Chem. C, 114(33), 14061 (2010).
-
(2010)
J. Phys. Chem. C
, vol.114
, Issue.33
, pp. 14061
-
-
Li, K.1
Li, S.2
Li, N.3
Dixon, D.A.4
Klein, T.N.5
-
98
-
-
28344457990
-
In situ infrared spectroscopy of hafnium oxide growth on hydrogen-terminated silicon surfaces by atomic layer deposition
-
M.-T. Ho, Y. Wang, R. T. Brewer, L. S. Wielunski, and Y. J. Chabal, In situ infrared spectroscopy of hafnium oxide growth on hydrogen-terminated silicon surfaces by atomic layer deposition, Appl. Phys. Lett., 87, 133103 (2005).
-
(2005)
Appl. Phys. Lett.
, vol.87
, pp. 133103
-
-
Ho, M.-T.1
Wang, Y.2
Brewer, R.T.3
Wielunski, L.S.4
Chabal, Y.J.5
-
99
-
-
34547454855
-
Characterization of ultra-thin hafnium oxide films grown on silicon by atomic layer deposition using tetrakis(ethylmethyl-amino) hafnium and water precursors
-
Y. Wang, M.-T. Ho, L. V. Goncharova, L. S. Wielunski, R. Rivillon-Amy, Y. J. Chabal, T. Gustafsson, N. Moumen, and M. Boleslawski, Characterization of ultra-thin hafnium oxide films grown on silicon by atomic layer deposition using tetrakis(ethylmethyl-amino) hafnium and water precursors, Chem. Mater., 19(13), 3127 (2007).
-
(2007)
Chem. Mater.
, vol.19
, Issue.13
, pp. 3127
-
-
Wang, Y.1
Ho, M.-T.2
Goncharova, L.V.3
Wielunski, L.S.4
Rivillon-Amy, R.5
Chabal, Y.J.6
Gustafsson, T.7
Moumen, N.8
Boleslawski, M.9
-
100
-
-
70349925830
-
In-situ infrared monitoring of atomic layer deposition of metal oxides on functionalized Si and Ge surfaces
-
M. Dai, J. Kwon, M.-T. Ho, Y. Wang, S. Rivillon, M. Li, Y. J. Chabal, and M. Boleslawski, In-situ infrared monitoring of atomic layer deposition of metal oxides on functionalized Si and Ge surfaces, Mater. Res. Soc. Symp. Proc., 996, 0996-H07-04 (2007).
-
(2007)
Mater. Res. Soc. Symp. Proc.
, vol.996
-
-
Dai, M.1
Kwon, J.2
Ho, M.-T.3
Wang, Y.4
Rivillon, S.5
Li, M.6
Chabal, Y.J.7
Boleslawski, M.8
-
101
-
-
55849100743
-
In situ gas phase diagnostics for hafnium oxide atomic layer deposition
-
J. E. Maslar, W. S. Hurst, D. R. Burgess, W. A. Kimes, N. V. Nguyen, E. F. Moore, and J. T. Hodges, In situ gas phase diagnostics for hafnium oxide atomic layer deposition, ECS Trans., 13(2), 139 (2008).
-
(2008)
ECS Trans.
, vol.13
, Issue.2
, pp. 139
-
-
Maslar, J.E.1
Hurst, W.S.2
Burgess, D.R.3
Kimes, W.A.4
Nguyen, N.V.5
Moore, E.F.6
Hodges, J.T.7
-
102
-
-
35348871122
-
In situ characterization of gas-phase species present during hafnium oxide atomic layer deposition
-
J. E. Maslar, W. S. Hurst, D. R. Burgess, W. A. Kimes, and N. V. Nguyen, In situ characterization of gas-phase species present during hafnium oxide atomic layer deposition, ECS Trans., 2(7), 133 (2007).
-
(2007)
ECS Trans.
, vol.2
, Issue.7
, pp. 133
-
-
Maslar, J.E.1
Hurst, W.S.2
Burgess, D.R.3
Kimes, W.A.4
Nguyen, N.V.5
-
103
-
-
80053070497
-
Tetrakis(ethylmethylamido) hafnium adsorption and reaction on hydrogen-terminated Si(100) surfaces
-
K. Li, S. Li, N. Li, T. M. Klein, and D. A. Dixon, Tetrakis(ethylmethylamido) hafnium adsorption and reaction on hydrogen-terminated Si(100) surfaces, J. Phys. Chem. C, 115, 18560 (2011).
-
(2011)
J. Phys. Chem. C
, vol.115
, pp. 18560
-
-
Li, K.1
Li, S.2
Li, N.3
Klein, T.M.4
Dixon, D.A.5
-
104
-
-
77950916477
-
Reflection absorption infrared spectroscopy during atomic layer deposition of HfO2 films from tetrakis(ethylmethylamido)hafnium and water
-
B. A. Sperling, W. A. Kimes, and J. E. Maslar, Reflection absorption infrared spectroscopy during atomic layer deposition of HfO2 films from tetrakis(ethylmethylamido)hafnium and water, Appl. Surf. Sci., 256, 5035 (2010).
-
(2010)
Appl. Surf. Sci.
, vol.256
, pp. 5035
-
-
Sperling, B.A.1
Kimes, W.A.2
Maslar, J.E.3
-
105
-
-
65249169295
-
In situ infrared characterization during atomic layer deposition of lanthanum oxide
-
J. Kwon, M. Dai, M. D. Halls, E. Langereis, Y. J. Chabal, and R. G. Gordon, In situ infrared characterization during atomic layer deposition of lanthanum oxide, J. Phys. Chem. C, 113(2), 654 (2009).
-
(2009)
J. Phys. Chem. C
, vol.113
, Issue.2
, pp. 654
-
-
Kwon, J.1
Dai, M.2
Halls, M.D.3
Langereis, E.4
Chabal, Y.J.5
Gordon, R.G.6
-
106
-
-
0001421965
-
Sequential surface chemical reaction limited growth of high quality Al2O3 dielectrics
-
G. S. Higashi and C. G. Fleming, Sequential surface chemical reaction limited growth of high quality Al2O3 dielectrics, Appl. Phys. Lett., 55(19), 1963 (1989).
-
(1989)
Appl. Phys. Lett.
, vol.55
, Issue.19
, pp. 1963
-
-
Higashi, G.S.1
Fleming, C.G.2
-
107
-
-
0035900121
-
In situ quartz crystal microbalance and quadrupole mass spectrometry studies of atomic layer deposition of aluminium oxide from trimethylaluminium and water
-
A. Rahtu, T. Alaranta, and M. Ritala, In situ quartz crystal microbalance and quadrupole mass spectrometry studies of atomic layer deposition of aluminium oxide from trimethylaluminium and water, Langmuir, 17(21), 6506 (2001).
-
(2001)
Langmuir
, vol.17
, Issue.21
, pp. 6506
-
-
Rahtu, A.1
Alaranta, T.2
Ritala, M.3
-
108
-
-
0033732664
-
In situ mass spectrometry study on surface reactions in atomic layer deposition of Al2O3 thin films from trimethylaluminium and water
-
M. Juppo, A. Rahtu, M. Ritala, and M. Leskelä, In situ mass spectrometry study on surface reactions in atomic layer deposition of Al2O3 thin films from trimethylaluminium and water, Langmuir, 16(8), 4034 (2000).
-
(2000)
Langmuir
, vol.16
, Issue.8
, pp. 4034
-
-
Juppo, M.1
Rahtu, A.2
Ritala, M.3
Leskelä, M.4
-
109
-
-
0033739843
-
Effect of water dose on the atomic layer deposition rate of oxide thin films
-
R. Matero, A. Rahtu, M. Ritala, M. Leskelä, and T. Sajavaara, Effect of water dose on the atomic layer deposition rate of oxide thin films, Thin Solid Films, 368, 1 (2000).
-
(2000)
Thin Solid Films
, vol.368
, pp. 1
-
-
Matero, R.1
Rahtu, A.2
Ritala, M.3
Leskelä, M.4
Sajavaara, T.5
-
110
-
-
0036685058
-
Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition
-
J. W. Elam, M. D. Groner, and S. M. George, Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition, Rev. Sci. Instrum., 73(8), 2981 (2002).
-
(2002)
Rev. Sci. Instrum.
, vol.73
, Issue.8
, pp. 2981
-
-
Elam, J.W.1
Groner, M.D.2
George, S.M.3
-
111
-
-
0037465334
-
Growth of ZnO/Al2O3 alloy films using atomic layer deposition techniques
-
J. W. Elam and S. M. George, Growth of ZnO/Al2O3 alloy films using atomic layer deposition techniques, Chem. Mater., 15(4), 1020 (2003).
-
(2003)
Chem. Mater.
, vol.15
, Issue.4
, pp. 1020
-
-
Elam, J.W.1
George, S.M.2
-
112
-
-
1242320224
-
Low-temperature Al2O3 atomic layer deposition
-
M. D. Groner, F. H. Fabrequette, J. W. Elam, and S. M. George, Low-temperature Al2O3 atomic layer deposition, Chem. Mater., 16(4), 639 (2004).
-
(2004)
Chem. Mater.
, vol.16
, Issue.4
, pp. 639
-
-
Groner, M.D.1
Fabrequette, F.H.2
Elam, J.W.3
George, S.M.4
-
113
-
-
24144500778
-
Conformal hydrophobic coatings prepared using atomic layer deposition seed layers and non-chlorinated hydrophobic precursors
-
C. F. Herrmann, F. W. DelRio, V. M. Bright, and S. M. George, Conformal hydrophobic coatings prepared using atomic layer deposition seed layers and non-chlorinated hydrophobic precursors, J. Micromech. Microeng., 15, 984 (2005).
-
(2005)
J. Micromech. Microeng.
, vol.15
, pp. 984
-
-
Herrmann, C.F.1
Delrio, F.W.2
Bright, V.M.3
George, S.M.4
-
114
-
-
77249175437
-
Quartz crystalmicrobalance studies on Al2O3 atomic layer deposition using trimethylaluminium and water at 125 ?C
-
R. A. Wind and S. M. George, Quartz crystalmicrobalance studies on Al2O3 atomic layer deposition using trimethylaluminium and water at 125 ?C, J. Phys. Chem. A, 114(3), 1281 (2010).
-
(2010)
J. Phys. Chem. A
, vol.114
, Issue.3
, pp. 1281
-
-
Wind, R.A.1
George, S.M.2
-
115
-
-
34547671033
-
Atomic layer deposition on particles using a fluidized bed reactor with in situ mass spectrometry
-
D. M. King, J. A. Spencer, X. Liang, L. F. Hakim, and A. W. Weimer, Atomic layer deposition on particles using a fluidized bed reactor with in situ mass spectrometry, Surf. Coat. Technol., 201, 9163 (2007).
-
(2007)
Surf. Coat. Technol.
, vol.201
, pp. 9163
-
-
King, D.M.1
Spencer, J.A.2
Liang, X.3
Hakim, L.F.4
Weimer, A.W.5
-
116
-
-
37149016673
-
Spatially controlled atomic layer deposition in porous materials
-
J. W. Elam, J. A. Libera, and M. J. Pellin, Spatially controlled atomic layer deposition in porous materials, Appl. Phys. Lett., 91, 243105 (2007).
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 243105
-
-
Elam, J.W.1
Libera, J.A.2
Pellin, M.J.3
-
117
-
-
0031553497
-
Al2O3 thin film growth on Si(100) using binary reaction sequence chemistry
-
A. W. Ott, J. W. Klaus, J. M. Johnson, and S. M. George, Al2O3 thin film growth on Si(100) using binary reaction sequence chemistry, Thin Solid Films, 292, 135 (1997).
-
(1997)
Thin Solid Films
, vol.292
, pp. 135
-
-
Ott, A.W.1
Klaus, J.W.2
Johnson, J.M.3
George, S.M.4
-
118
-
-
0001034130
-
The reaction pathway for the growth of alumina on high surface area alumina and in ultrahigh vacuum by a reaction between trimethyl aluminum and water
-
C. Soto and W. T. Tysoe, The reaction pathway for the growth of alumina on high surface area alumina and in ultrahigh vacuum by a reaction between trimethyl aluminum and water, J. Vac. Sci. Technol. A, 9(5), 2686 (1991).
-
(1991)
J. Vac. Sci. Technol. A
, vol.9
, Issue.5
, pp. 2686
-
-
Soto, C.1
Tysoe, W.T.2
-
119
-
-
0005357904
-
Modification of porous alumina membranes using Al2O3 atomic layer controlled deposition
-
A. W. Ott, J. W. Klaus, J. M. Johnson, S. M. George, K. C. McCarley, and J. D. Way, Modification of porous alumina membranes using Al2O3 atomic layer controlled deposition, Chem. Mater., 9(3), 707 (1997).
-
(1997)
Chem. Mater.
, vol.9
, Issue.3
, pp. 707
-
-
Ott, A.W.1
Klaus, J.W.2
Johnson, J.M.3
George, S.M.4
McCarley, K.C.5
Way, J.D.6
-
120
-
-
0033689223
-
Atomic layer deposition of ultrathin and conformal Al2O3 films on BN particles
-
J. D. Ferguson, A. W. Weimer, and S. M. George, Atomic layer deposition of ultrathin and conformal Al2O3 films on BN particles, Thin Solid Films, 371, 95 (2000).
-
(2000)
Thin Solid Films
, vol.371
, pp. 95
-
-
Ferguson, J.D.1
Weimer, A.W.2
George, S.M.3
-
121
-
-
0029184808
-
Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequence
-
A. C. Dillon, A. W. Ott, J. D. Way, and S. M. George, Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequence, Surf. Sci., 322, 230 (1995).
-
(1995)
Surf. Sci.
, vol.322
, pp. 230
-
-
Dillon, A.C.1
Ott, A.W.2
Way, J.D.3
George, S.M.4
-
122
-
-
1842818119
-
Atomic layer deposition of Al2O3 on H-passivated Si: Al(CH3)2OH surface reactions with H/Si(100)-2x1
-
M. D. Halls, K. Raghavachari, M. M. Frank, and Y. J. Chabal, Atomic layer deposition of Al2O3 on H-passivated Si: Al(CH3)2OH surface reactions with H/Si(100)-2x1, Phys. Rev. B, 68, 161302-1 (2003).
-
(2003)
Phys. Rev. B
, vol.68
, pp. 161302-161311
-
-
Halls, M.D.1
Raghavachari, K.2
Frank, M.M.3
Chabal, Y.J.4
-
123
-
-
0030566216
-
Atomic layer controlled deposition of Al2O3 films using binary reaction sequence chemistry
-
A. W. Ott, K. C. McCarley, J. W. Klaus, J. D. Way, and S. M. George, Atomic layer controlled deposition of Al2O3 films using binary reaction sequence chemistry, Appl. Surf. Sci., 107, 128 (1996).
-
(1996)
Appl. Surf. Sci.
, vol.107
, pp. 128
-
-
Ott, A.W.1
McCarley, K.C.2
Klaus, J.W.3
Way, J.D.4
George, S.M.5
-
124
-
-
0141567439
-
Conformal coating on ultrahigh-aspec-ratio nanopores of anodic alumina by atomic layer deposition
-
J. W. Elam, D. Routkevitch, P. P. Mardilovich, and S. M. George, Conformal coating on ultrahigh-aspec-ratio nanopores of anodic alumina by atomic layer deposition, Chem. Mater., 15(18), 3507 (2003).
-
(2003)
Chem. Mater.
, vol.15
, Issue.18
, pp. 3507
-
-
Elam, J.W.1
Routkevitch, D.2
Mardilovich, P.P.3
George, S.M.4
-
125
-
-
0038444633
-
Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides
-
M. M. Frank, Y. J. Chabal, and G. D. Wilk, Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides, Appl. Phys. Lett., 82(26), 4758 (2003).
-
(2003)
Appl. Phys. Lett.
, vol.82
, Issue.26
, pp. 4758
-
-
Frank, M.M.1
Chabal, Y.J.2
Wilk, G.D.3
-
126
-
-
0033886407
-
Study of atomic layer epitaxy of zinc oxide by in-situ quartz crystal microgravimetry
-
E. B. Yousfi, J. Fouache, and D. Lincot, Study of atomic layer epitaxy of zinc oxide by in-situ quartz crystal microgravimetry, Appl. Surf. Sci., 153, 223 (2000).
-
(2000)
Appl. Surf. Sci.
, vol.153
, pp. 223
-
-
Yousfi, E.B.1
Fouache, J.2
Lincot, D.3
-
127
-
-
0035967555
-
Atomic layer deposition of zinc oxide and indium sulfide layers for Cu(In, Ga)Se2 thin-film solar cells
-
E. B. Yousfi, B. Weinberger, F. Donsanti, P. Cowache, and D. Lincot, Atomic layer deposition of zinc oxide and indium sulfide layers for Cu(In, Ga)Se2 thin-film solar cells, Thin Solid Films, 387, 29 (2001).
-
(2001)
Thin Solid Films
, vol.387
, pp. 29
-
-
Yousfi, E.B.1
Weinberger, B.2
Donsanti, F.3
Cowache, P.4
Lincot, D.5
-
128
-
-
21744442608
-
Surface chemistry and infrared absorbance changes during ZnO atomic layer deposition on ZrO2 and BaTiO3 particles
-
J. D. Ferguson, A. W. Weimer, and S. M. George, Surface chemistry and infrared absorbance changes during ZnO atomic layer deposition on ZrO2 and BaTiO3 particles, J. Vac. Sci. Technol. A, 23(1), 118 (2005).
-
(2005)
J. Vac. Sci. Technol. A
, vol.23
, Issue.1
, pp. 118
-
-
Ferguson, J.D.1
Weimer, A.W.2
George, S.M.3
-
129
-
-
66049088687
-
Atomic layer deposition of MnO using bis(ethylcyclopentadienyl)manganese and H2O
-
B. B. Burton, F. H. Fabreguette, and S. M. George, Atomic layer deposition of MnO using bis(ethylcyclopentadienyl)manganese and H2O, Thin Solid Films, 517, 5658 (2009).
-
(2009)
Thin Solid Films
, vol.517
, pp. 5658
-
-
Burton, B.B.1
Fabreguette, F.H.2
George, S.M.3
-
130
-
-
65349166350
-
Atomic layer deposition of MgO using bis(ethylcyclopentadienyl)magnesium and H2O
-
B. B. Burton, D. N. Goldstein, and S. M. George, Atomic layer deposition of MgO using bis(ethylcyclopentadienyl)magnesium and H2O, J. Phys. Chem. C, 113, 1939 (2009).
-
(2009)
J. Phys. Chem. C
, vol.113
, pp. 1939
-
-
Burton, B.B.1
Goldstein, D.N.2
George, S.M.3
-
131
-
-
23844485990
-
In situ quadrupole mass spectrometry study of atomiclayer deposition of ZrO2 using Cp2Zr(CH3)2 and water
-
J. Niinistö, A. Rahtu, M. Putkonen, M. Ritala, M. Leskelä, and L. Niinistö, In situ quadrupole mass spectrometry study of atomiclayer deposition of ZrO2 using Cp2Zr(CH3)2 and water, Chem. Mater., 21(16), 7321 (2005).
-
(2005)
Chem. Mater.
, vol.21
, Issue.16
, pp. 7321
-
-
Niinistö, J.1
Rahtu, A.2
Putkonen, M.3
Ritala, M.4
Leskelä, M.5
Niinistö, L.6
-
132
-
-
17444370936
-
In situ reaction mechanism studies on the atomic layer deposition of Al2O3 from (CH3)2AlCl and water
-
R. Matero, A. Rahtu, and M. Ritala, In situ reaction mechanism studies on the atomic layer deposition of Al2O3 from (CH3)2AlCl and water, Langmuir, 21(8), 3498 (2005).
-
(2005)
Langmuir
, vol.21
, Issue.8
, pp. 3498
-
-
Matero, R.1
Rahtu, A.2
Ritala, M.3
-
133
-
-
0345743647
-
Preparation of Al2O3 thin films by atomic layer deposition using dimethylaluminum isopropoxide and water and their reaction mechanisms
-
K.-S. An, W. Cho, K. Sung, S. S. Lee, and Y. Kim, Preparation of Al2O3 thin films by atomic layer deposition using dimethylaluminum isopropoxide and water and their reaction mechanisms, Bull. Korean Chem. Soc., 24(11), 1659 (2003).
-
(2003)
Bull. Korean Chem. Soc.
, vol.24
, Issue.11
, pp. 1659
-
-
An, K.-S.1
Cho, W.2
Sung, K.3
Lee, S.S.4
Kim, Y.5
-
134
-
-
37549060993
-
Mechanism for zirconium oxide atomic layer deposition using bis(methylcyclopentadienyl)methoxymethyl zirconium
-
J. W. Elam, M. J. Pellin, S. D. Elliot, A. Zydor, M. C. Faia, and J. T. Hupp, Mechanism for zirconium oxide atomic layer deposition using bis(methylcyclopentadienyl)methoxymethyl zirconium, Appl. Phys. Lett., 91, 253123 (2007).
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 253123
-
-
Elam, J.W.1
Pellin, M.J.2
Elliot, S.D.3
Zydor, A.4
Faia, M.C.5
Hupp, J.T.6
-
135
-
-
10244241828
-
Infrared spectroscopic study of atomic layer deposition mechanism for hafnium silicate thin films using HfCl2[N(SiMe3)2]2 and H2O
-
S.-W. Kang, S.-W. Rhee, and S. M. George, Infrared spectroscopic study of atomic layer deposition mechanism for hafnium silicate thin films using HfCl2[N(SiMe3)2]2 and H2O, J. Vac. Sci. Technol. A, 22(6), 2392 (2004).
-
(2004)
J. Vac. Sci. Technol. A
, vol.22
, Issue.6
, pp. 2392
-
-
Kang, S.-W.1
Rhee, S.-W.2
George, S.M.3
-
137
-
-
40249106125
-
Atomic layer deposition of tin oxide films using tetrakis(dimethylamino) tin
-
J. W. Elam, D. A. Baker, A. J. Hryn, A. B. F. Martinson, M. J. Pellin, and J. T. Hupp, Atomic layer deposition of tin oxide films using tetrakis(dimethylamino)tin, J. Vac. Sci. Technol. A, 26(2), 244 (2008).
-
(2008)
J. Vac. Sci. Technol. A
, vol.26
, Issue.2
, pp. 244
-
-
Elam, J.W.1
Baker, D.A.2
Hryn, A.J.3
Martinson, A.B.F.4
Pellin, M.J.5
Hupp, J.T.6
-
138
-
-
31044432506
-
In situ examination of tin oxide atomic layer deposition using quartz crystal microbalance and Fourier transform infrared techniques
-
X. Du, Y. Du, and S. M. George, In situ examination of tin oxide atomic layer deposition using quartz crystal microbalance and Fourier transform infrared techniques, J. Vac. Sci. Technol. A, 23(4), 581 (2005).
-
(2005)
J. Vac. Sci. Technol. A
, vol.23
, Issue.4
, pp. 581
-
-
Du, X.1
Du, Y.2
George, S.M.3
-
139
-
-
54249113344
-
CO gas sensing by ultrathin tin oxide films grown by atomic layer deposition using transmission FTIR spectroscopy
-
X. Du, Y. Du, and S. M. George, CO gas sensing by ultrathin tin oxide films grown by atomic layer deposition using transmission FTIR spectroscopy, J. Phys. Chem. A, 112(39), 9211 (2008).
-
(2008)
J. Phys. Chem. A
, vol.112
, Issue.39
, pp. 9211
-
-
Du, X.1
Du, Y.2
George, S.M.3
-
140
-
-
0034300887
-
Real-time monitoring in atomic layer deposition of TiO2 from TiI4 and H2O-H2O2
-
K. Kukli, A. Aidla, J. Aarik, M. Schuisky, A. Hårsta, M. Ritala, and M. Leskelä, Real-time monitoring in atomic layer deposition of TiO2 from TiI4 and H2O-H2O2, Langmuir, 16(21), 8122 (2000).
-
(2000)
Langmuir
, vol.16
, Issue.21
, pp. 8122
-
-
Kukli, K.1
Aidla, A.2
Aarik, J.3
Schuisky, M.4
Hårsta, A.5
Ritala, M.6
Leskelä, M.7
-
141
-
-
0035452393
-
Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide
-
K. Kukli, K. Forsgren, J. Aarik, T. Uustare, A. Aidla, A. Niskanen, M. Ritala, M. Leskelä, and A. Hårsta, Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide, J. Cryst. Growth, 231, 262 (2001).
-
(2001)
J. Cryst. Growth
, vol.231
, pp. 262
-
-
Kukli, K.1
Forsgren, K.2
Aarik, J.3
Uustare, T.4
Aidla, A.5
Niskanen, A.6
Ritala, M.7
Leskelä, M.8
Hårsta, A.9
-
142
-
-
0011149085
-
Chemical deposition routes to HfO2: Real-time monitoring and film growth
-
K. Forsgren and A. Hårsta, Chemical deposition routes to HfO2: Real-time monitoring and film growth, Electrochem. Soc. Proc., 2001-13, 152 (2001).
-
(2001)
Electrochem. Soc. Proc. 2001-13
, pp. 152
-
-
Forsgren, K.1
Hårsta, A.2
-
143
-
-
0035115268
-
Atomic layer deposition of tantalum oxide thin films from iodide precursor
-
K. Kukli, J. Aarik, A. Aidla, K. Forsgren, J. Sundqvist, A. Hårsta, T. Uustare, H. Mändar, andA.-A. Kiisler, Atomic layer deposition of tantalum oxide thin films from iodide precursor, Chem. Mater., 13(1), 122 (2001).
-
(2001)
Chem. Mater.
, vol.13
, Issue.1
, pp. 122
-
-
Kukli, K.1
Aarik, J.2
Aidla, A.3
Forsgren, K.4
Sundqvist, J.5
Hårsta, A.6
Uustare, T.7
Mändar, H.8
Kiisler, A.-A.9
-
144
-
-
0006092821
-
Self-limiting behavior of the growth of Al2O3 using sequential vapor pulses of TMA and H2O2
-
J.-F. Fan and K. Toyoda, Self-limiting behavior of the growth of Al2O3 using sequential vapor pulses of TMA and H2O2, Appl. Surf. Sci., 60/61, 765 (1992).
-
(1992)
Appl. Surf. Sci.
, vol.60-61
, pp. 765
-
-
Fan, J.-F.1
Toyoda, K.2
-
145
-
-
67049135968
-
SiO2 atomic layer deposition using tris(dimethylamino)silane and hydrogen peroxide studied by in situ transmission FTIR spectroscopy
-
B. B. Burton, S. W. Kang, S. W. Rhee, and S. M. George, SiO2 atomic layer deposition using tris(dimethylamino)silane and hydrogen peroxide studied by in situ transmission FTIR spectroscopy, J. Phys. Chem. C, 113, 8249 (2009).
-
(2009)
J. Phys. Chem. C
, vol.113
, pp. 8249
-
-
Burton, B.B.1
Kang, S.W.2
Rhee, S.W.3
George, S.M.4
-
146
-
-
33749239600
-
In situ reaction mechanism studies of plasma-assisted atomic layer deposition ofAl2O3
-
S. B. S. Heil, P. Kudlacek, E. Langereis, R. Engeln, M. C. M. van de Sanden, and W. M. M. Kessels, In situ reaction mechanism studies of plasma-assisted atomic layer deposition ofAl2O3, Appl. Phys. Lett., 89, 131505 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 131505
-
-
Heil, S.B.S.1
Kudlacek, P.2
Langereis, E.3
Engeln, R.4
De Van Sanden, M.M.C.5
Kessels, W.M.M.6
-
147
-
-
44649110202
-
Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
-
S. B. S. Heil, J. L. van Hemmen, M. C. M. van de Sanden, and W. M. M. Kessels, Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3, J. Appl. Phys., 103, 103302 (2008).
-
(2008)
J. Appl. Phys.
, vol.103
, pp. 103302
-
-
Heil, S.B.S.1
Van Hemmen, J.L.2
De Van Sanden, M.M.C.3
Kessels, W.M.M.4
-
148
-
-
45149121175
-
Surfrace chemistry of plasma-assisted atomic layer deposition ofAl2O3 studied by infrared spectroscopy
-
E. Langereis, J. Keijmel, M. C. M. van de Sanden, and W. M. M. Kessels, Surfrace chemistry of plasma-assisted atomic layer deposition ofAl2O3 studied by infrared spectroscopy, Appl. Phys. Lett., 92, 231904 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 231904
-
-
Langereis, E.1
Keijmel, J.2
De Van Sanden, M.M.C.3
Kessels, W.M.M.4
-
149
-
-
77957968445
-
Surface reaction mechanisms during ozone and oxygen plasma assisted atomic layer deposition of aluminum oxide
-
V. R. Rai, V. Vandalon, and S. Agarwal, Surface reaction mechanisms during ozone and oxygen plasma assisted atomic layer deposition of aluminum oxide, Langmuir, 26(17), 13732 (2010).
-
(2010)
Langmuir
, vol.26
, Issue.17
, pp. 13732
-
-
Rai, V.R.1
Vandalon, V.2
Agarwal, S.3
-
150
-
-
64349109641
-
Al2O3 atomic layer deposition with trimethylaluminum and ozone studied by in situ transmission FTIR spectroscopy and quadrupole mass spectrometry
-
D. N. Goldstein, J. A. McCormick, and S. M. George, Al2O3 atomic layer deposition with trimethylaluminum and ozone studied by in situ transmission FTIR spectroscopy and quadrupole mass spectrometry, J. Phys. Chem. C, 112(49), 19530 (2008).
-
(2008)
J. Phys. Chem. C
, vol.112
, Issue.49
, pp. 19530
-
-
Goldstein, D.N.1
McCormick, J.A.2
George, S.M.3
-
151
-
-
77957951107
-
In situ reaction mechanism studies on ozone-based atomic layer seposition of Al2O3 and HfO2
-
M. Rose, J. Niinistö, I. Endler, J. W. Bartha, P. Kücher, and M. Ritala, In situ reaction mechanism studies on ozone-based atomic layer seposition of Al2O3 and HfO2, ACS Appl. Mater. Interfaces, 2(2), 347 (2010).
-
(2010)
ACS Appl. Mater. Interfaces
, vol.2
, Issue.2
, pp. 347
-
-
Rose, M.1
Niinistö, J.2
Endler, I.3
Bartha, J.W.4
Kücher, P.5
Ritala, M.6
-
152
-
-
45749104689
-
Detection of a formate surface intermediate in the atomic layer deposition of high-k dielectrics using ozone
-
J. Kwon, M. Dai, M. D. Halls, and Y. J. Chabal, Detection of a formate surface intermediate in the atomic layer deposition of high-k dielectrics using ozone, Chem. Mater., 20(10), 3248 (2008).
-
(2008)
Chem. Mater.
, vol.20
, Issue.10
, pp. 3248
-
-
Kwon, J.1
Dai, M.2
Halls, M.D.3
Chabal, Y.J.4
-
153
-
-
40049110891
-
Atomic layer deposition of indium tin oxide thin films using nonhalogenated precursors
-
J. W. Elam, D. A. Baker, A. B. F. Martinson, M. J. Pellin, and J. T. Hupp, Atomic layer deposition of indium tin oxide thin films using nonhalogenated precursors, J. Phys. Chem. C, 112(6), 1938 (2008).
-
(2008)
J. Phys. Chem. C
, vol.112
, Issue.6
, pp. 1938
-
-
Elam, J.W.1
Baker, D.A.2
Martinson, A.B.F.3
Pellin, M.J.4
Hupp, J.T.5
-
154
-
-
79955062152
-
Indium oxide atomic layer deposition facilitated by the synergy between oxygen and water
-
J. A. Libera, J. N. Hryn, and J. W. Elam, Indium oxide atomic layer deposition facilitated by the synergy between oxygen and water, Chem. Mater., 23, 2150 (2011).
-
(2011)
Chem. Mater.
, vol.23
, pp. 2150
-
-
Libera, J.A.1
Hryn, J.N.2
Elam, J.W.3
-
155
-
-
15744384552
-
ALD of hafnium oxide thin films from tetrakis (ethylmethylamino)hafnium and ozone
-
X. Liu, S. Ramanathan, A. Longdergan, A. Srivastava, E. Lee, T. E. Seidel, J. T. Barton, D. Pang, and R. G. Gordon, ALD of hafnium oxide thin films from tetrakis (ethylmethylamino)hafnium and ozone, J. Electrochem. Soc., 152(3), G213 (2005).
-
(2005)
J. Electrochem. Soc.
, vol.152
, Issue.3
-
-
Liu, X.1
Ramanathan, S.2
Longdergan, A.3
Srivastava, A.4
Lee, E.5
Seidel, T.E.6
Barton, J.T.7
Pang, D.8
Gordon, R.G.9
-
156
-
-
33846237263
-
Infrared characterization of hafnium oxide grown by atomic layer deposition using ozone as the oxygen precursor
-
Y. Wang, M. Dai, M.-T. Ho, L. S. Wielunski, and Y. J. Chabal, Infrared characterization of hafnium oxide grown by atomic layer deposition using ozone as the oxygen precursor, Appl. Phys. Lett., 90, 022906 (2007).
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 022906
-
-
Wang, Y.1
Dai, M.2
Ho, M.-T.3
Wielunski, L.S.4
Chabal, Y.J.5
-
157
-
-
73849111615
-
Atomic layer deposition of titanium dioxide thin films from Cp?Ti(OMe)3 and ozone
-
M. Rose, J. Niinistö, P. Michalowski, L. Gerlich, L. Wilde, I. Endler, and J. W. Bartha, Atomic layer deposition of titanium dioxide thin films from Cp?Ti(OMe)3 and ozone, J. Phys. Chem. C, 113(52), 21825 (2009).
-
(2009)
J. Phys. Chem. C
, vol.113
, Issue.52
, pp. 21825
-
-
Rose, M.1
Niinistö, J.2
Michalowski, P.3
Gerlich, L.4
Wilde, L.5
Endler, I.6
Bartha, J.W.7
-
158
-
-
53549117718
-
Surface reaction mechanisms during ozone-based atomic layer deposition of titanium dioxide
-
V. R. Rai and S. Agarwal, Surface reaction mechanisms during ozone-based atomic layer deposition of titanium dioxide, J. Phys. Chem. C, 112(26), 9552 (2008).
-
(2008)
J. Phys. Chem. C
, vol.112
, Issue.26
, pp. 9552
-
-
Rai, V.R.1
Agarwal, S.2
-
159
-
-
68349106863
-
Surface reaction mechanisms during plasma-assisted atomic layer deposition of titanium dioxide
-
V. R. Rai and S. Agarwal, Surface reaction mechanisms during plasma-assisted atomic layer deposition of titanium dioxide, J. Phys. Chem. C, 113(30), 12962 (2009).
-
(2009)
J. Phys. Chem. C
, vol.113
, Issue.30
, pp. 12962
-
-
Rai, V.R.1
Agarwal, S.2
-
160
-
-
0035807159
-
Atomic layer deposition of thin films using O2 as oxygen source
-
M. Shuisky, J. Aarik, K. Kukli, A. Aidla, and A. Hårsta, Atomic layer deposition of thin films using O2 as oxygen source, Langmuir, 17(18), 5508 (2001).
-
(2001)
Langmuir
, vol.17
, Issue.18
, pp. 5508
-
-
Shuisky, M.1
Aarik, J.2
Kukli, K.3
Aidla, A.4
Hårsta, A.5
-
161
-
-
79955674801
-
Mechanism of self-catalytic atomic layer deposition of silicon dioxide using 3-aminopropyl triethoxysilane, water and ozone
-
V. R. Rai and S. Agarwal, Mechanism of self-catalytic atomic layer deposition of silicon dioxide using 3-aminopropyl triethoxysilane, water, and ozone, Chem. Mater., 23, 2312 (2011).
-
(2011)
Chem. Mater.
, vol.23
, pp. 2312
-
-
Rai, V.R.1
Agarwal, S.2
-
162
-
-
34547828174
-
Infrared study of tris(dimethylamino)silane adsorption and ozone irradiation on Si(100) surfaces for ALD of SiO2
-
Y. Kinoshita, F. Hirose, H. Miya, K. Hirahara, Y. Kimura, and M. Niwano, Infrared study of tris(dimethylamino)silane adsorption and ozone irradiation on Si(100) surfaces for ALD of SiO2, Electrochem. Solid-State Lett., 10(10), G80 (2007).
-
(2007)
Electrochem. Solid-State Lett.
, vol.10
, Issue.10
-
-
Kinoshita, Y.1
Hirose, F.2
Miya, H.3
Hirahara, K.4
Kimura, Y.5
Niwano, M.6
-
163
-
-
55649117699
-
Atomic-layer-deposition of SiO2 with tris(dimethylamino)silane (TMDAS) and ozone investigated by infrared absorption spectroscopy
-
F. Hirose, Y. Kinoshita, S. Shibuya, H. Miya, K. Hirahara, Y. Kimura, and M. Niwano, Atomic-layer-deposition of SiO2 with tris(dimethylamino)silane (TMDAS) and ozone investigated by infrared absorption spectroscopy, ECS Trans., 13(1), 171 (2008).
-
(2008)
ECS Trans.
, vol.13
, Issue.1
, pp. 171
-
-
Hirose, F.1
Kinoshita, Y.2
Shibuya, S.3
Miya, H.4
Hirahara, K.5
Kimura, Y.6
Niwano, M.7
-
164
-
-
79953227425
-
Atomic layer deposition of Fe2O3 using ferrocene and ozone
-
A. B. F. Martinson, M. J. DeVries, J. A. Libera, S. T. Christensen, J. T. Hupp, M. J. Pellin, and J. W. Elam, Atomic layer deposition of Fe2O3 using ferrocene and ozone, J. Phys. Chem. C, 115, 4333 (2011).
-
(2011)
J. Phys. Chem. C
, vol.115
, pp. 4333
-
-
Martinson, A.B.F.1
Devries, M.J.2
Libera, J.A.3
Christensen, S.T.4
Hupp, J.T.5
Pellin, M.J.6
Elam, J.W.7
-
165
-
-
17744381361
-
Surface reaction kinetics of metal. ?- diketonate precursors with O radicals in radical-enhanced atomic layer deposition ofmetal oxides
-
T. T. Van and J. P. Chang, Surface reaction kinetics of metal ?- diketonate precursors with O radicals in radical-enhanced atomic layer deposition ofmetal oxides, Appl. Surf. Sci., 246, 250 (2005).
-
(2005)
Appl. Surf. Sci.
, vol.246
, pp. 250
-
-
Van, T.T.1
Chang, J.P.2
-
166
-
-
0034646723
-
Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources
-
M. Ritala, K. Kukli, A. Rahtu, P. I. Räisänen, M. Leskelä, T. Sajavaara, and J. Keinonen, Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources, Science, 288, 319 (2000).
-
(2000)
Science
, vol.288
, pp. 319
-
-
Ritala, M.1
Kukli, K.2
Rahtu, A.3
Räisänen, P.I.4
Leskelä, M.5
Sajavaara, T.6
Keinonen, J.7
-
167
-
-
0037059172
-
Reaction mechanism studies on the atomic layer deposition of ZrxTiyOz using the novelmetal halidemetal alkoxide approach
-
A. Rahtu and M. Ritala, Reaction mechanism studies on the atomic layer deposition of ZrxTiyOz using the novelmetal halidemetal alkoxide approach, Langmuir, 18(25), 10046 (2002).
-
(2002)
Langmuir
, vol.18
, Issue.25
, pp. 10046
-
-
Rahtu, A.1
Ritala, M.2
-
168
-
-
10444232708
-
Atomic layer deposition analysis of HfSiO4 by mass spectroscopy and XPS
-
M.-S. Kim, and S. A. Rogers, Atomic layer deposition analysis of HfSiO4 by mass spectroscopy and XPS, J. Korean Phys. Soc., 45(5), 1317 (2004).
-
(2004)
J. Korean Phys. Soc.
, vol.45
, Issue.5
, pp. 1317
-
-
Kim, M.-S.1
Rogers, S.A.2
-
169
-
-
0000800954
-
In situ study of strontium. ?-diketonate precursor for thin-film growth by atomic layer epitaxy
-
J. Aarik, A. Aidla, A. Jaek, M. Leskelä, and L. Niinistö, In situ study of strontium ?-diketonate precursor for thin-film growth by atomic layer epitaxy, J. Mater. Chem., 4(8), 1239 (1994).
-
(1994)
J. Mater. Chem.
, vol.4
, Issue.8
, pp. 1239
-
-
Aarik, J.1
Aidla, A.2
Jaek, A.3
Leskelä, M.4
Niinistö, L.5
-
170
-
-
0035485155
-
Indium-based interface chemical engineering by electrochemistry and atomic layer deposition for copper indium diselenide solar cells
-
J.-F. Guillemoles, B. Canava, E. B. Yousfi, P. Cowache, A. Galtayries, T. Asikainen, M. Powalla, D. Hariskos, H.-W. Schock, and D. Lincot, Indium-based interface chemical engineering by electrochemistry and atomic layer deposition for copper indium diselenide solar cells, Jpn. J. Appl. Phys., Part 1, 40, 6065 (2001).
-
(2001)
Jpn. J. Appl. Phys., Part
, vol.1
, Issue.40
, pp. 6065
-
-
Guillemoles, J.-F.1
Canava, B.2
Yousfi, E.B.3
Cowache, P.4
Galtayries, A.5
Asikainen, T.6
Powalla, M.7
Hariskos, D.8
Schock, H.-W.9
Lincot, D.10
-
171
-
-
0035557165
-
Atomic layer deposition of indium sulfide layers for copper indium galium diselenide solar cells
-
F. Donsanti, B. Weinberger, P. Cowache, M. C. Bernard, and D. Lincot, Atomic layer deposition of indium sulfide layers for copper indium galium diselenide solar cells, Mat. Res. Soc. Symp. Proc., 668, H8. 20 (2001).
-
(2001)
Mat. Res. Soc. Symp. Proc.
, vol.668
-
-
Donsanti, F.1
Weinberger, B.2
Cowache, P.3
Bernard, M.C.4
Lincot, D.5
-
172
-
-
77951886455
-
In2S3 atomic layer deposition and its application as a sensitizer on TiO2 nanotube arrays for solar energy conversion
-
S. K. Sarkar, J. Y. Kim, D. N. goldstein, N. R. Neale, K. Zhu, C. M. Elliott, A. J. Frank, and S. M. George, In2S3 atomic layer deposition and its application as a sensitizer on TiO2 nanotube arrays for solar energy conversion, J. Phys. Chem. C, 114, 8032 (2010).
-
(2010)
J. Phys. Chem. C
, vol.114
, pp. 8032
-
-
Sarkar, S.K.1
Kim, J.Y.2
Goldstein, D.N.3
Neale, N.R.4
Zhu, K.5
Elliott, C.M.6
Frank, A.J.7
George, S.M.8
-
173
-
-
0028760779
-
Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy
-
C. D. Lee, B. K. Kim, J. W. Kim, H. L. Park, C. H. Chung, S. K. Chang, J. I. Lee, and S. K. Noh, Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy, J. Cryst. Growth, 138, 136 (1994).
-
(1994)
J. Cryst. Growth
, vol.138
, pp. 136
-
-
Lee, C.D.1
Kim, B.K.2
Kim, J.W.3
Park, H.L.4
Chung, C.H.5
Chang, S.K.6
Lee, J.I.7
Noh, S.K.8
-
174
-
-
21544433891
-
Structural properties of ZnSe on GaAs grown by atomic layer epitaxy
-
C. D. Lee, B. K. Kim, J. W. Kim, S. K. Chang, and S. H. Suh, Structural properties of ZnSe on GaAs grown by atomic layer epitaxy, J. Appl. Phys., 76(2), 928 (1994).
-
(1994)
J. Appl. Phys.
, vol.76
, Issue.2
, pp. 928
-
-
Lee, C.D.1
Kim, B.K.2
Kim, J.W.3
Chang, S.K.4
Suh, S.H.5
-
175
-
-
0030205483
-
Atomic layer epitaxy growth of ZnSe on (100) GaAs using metalorganic vapor-phase epitaxy system
-
C.-T. Hsu, Atomic layer epitaxy growth of ZnSe on (100) GaAs using metalorganic vapor-phase epitaxy system, Jpn. J. Appl. Phys., Part 1, 35(8),
-
(1996)
Jpn. J. Appl. Phys., Part 1
, vol.35
, Issue.8
, pp. 4476
-
-
Hsu, C.-T.1
-
176
-
-
0032315596
-
Epitaxial growth of II-VI compound semiconductors by atomic layer epitaxy
-
C. T. Hsu, Epitaxial growth of II-VI compound semiconductors by atomic layer epitaxy, Thin Solid Films, 335, 284 (1998).
-
(1998)
Thin Solid Films
, vol.335
, pp. 284
-
-
Hsu, C.T.1
-
177
-
-
0033746103
-
Growth and characterization of ZnSe on Si by atomic layer epitaxy
-
M. Yokoyama, N. T. Chen, and H. Y. Ueng, Growth and characterization of ZnSe on Si by atomic layer epitaxy, J. Cryst. Growth, 212, 97 (2000).
-
(2000)
J. Cryst. Growth
, vol.212
, pp. 97
-
-
Yokoyama, M.1
Chen, N.T.2
Ueng, H.Y.3
-
178
-
-
67749106317
-
Atomic layer deposition of metal tellurides and selenides using alkylsilyl compounds of tellurium and selenium
-
V. Pore, T. Hatanpä̈a, M. Ritala, and M. Leskelä, Atomic layer deposition of metal tellurides and selenides using alkylsilyl compounds of tellurium and selenium, J. Am. Chem. Soc., 131, 3478 (2009).
-
(2009)
J. Am. Chem. Soc.
, vol.131
, pp. 3478
-
-
Pore, V.1
Hatanpä̈a, T.2
Ritala, M.3
Leskelä, M.4
-
179
-
-
67349117674
-
Atomic layer deposition of Ge2Sb2Te5 thin films
-
M. Ritala, V. Pore, T. Hatanpä̈a, M. Heikkilä, M. Leskelä, K. Mizohata, A. Schrott, S. Raoux, and S. M. Rossnagel, Atomic layer deposition of Ge2Sb2Te5 thin films, Microelectron. Eng., 86, 1946 (2009).
-
(2009)
Microelectron. Eng.
, vol.86
, pp. 1946
-
-
Ritala, M.1
Pore, V.2
Hatanpä̈a, T.3
Heikkilä, M.4
Leskelä, M.5
Mizohata, K.6
Schrott, A.7
Raoux, S.8
Rossnagel, S.M.9
-
180
-
-
77049107645
-
In situ reaction mechanism studies on atomic layer deposition of Sb2Te3 and GeTe from (Et3Si)2Te and chlorides
-
K. Knapas, T. Hatanpä̈a, M. Ritala, and M. Leskelä, In situ reaction mechanism studies on atomic layer deposition of Sb2Te3 and GeTe from (Et3Si)2Te and chlorides, Chem. Mater., 22(4), 1386 (2010).
-
(2010)
Chem. Mater.
, vol.22
, Issue.4
, pp. 1386
-
-
Knapas, K.1
Hatanpä̈a, T.2
Ritala, M.3
Leskelä, M.4
-
181
-
-
0037166597
-
Atomic layer deposition of boron nitride using sequential exposures of BCl3 and NH3
-
J. D. Ferguson, A. W. Weimer, and S. M. George, Atomic layer deposition of boron nitride using sequential exposures of BCl3 and NH3, Thin Solid Films, 413, 16 (2002).
-
(2002)
Thin Solid Films
, vol.413
, pp. 16
-
-
Ferguson, J.D.1
Weimer, A.W.2
George, S.M.3
-
182
-
-
38949206831
-
Mechanistic details of atomic layer deposition (ALD) processes for metal nitride film growth
-
H. Tiznado, M. Bouman, A. I. Lee, and F. Zaera, Mechanistic details of atomic layer deposition (ALD) processes for metal nitride film growth, J. Mol. Catal. A: Chem., 281, 35 (2008).
-
(2008)
J. Mol. Catal. A: Chem.
, vol.281
, pp. 35
-
-
Tiznado, H.1
Bouman, M.2
Lee, A.I.3
Zaera, F.4
-
183
-
-
0036121227
-
In situ mass spectrometry study on surface reactions in atomic layer deposition of TiN and Ti(Al)N thin films
-
M. Juppo, A. Rahtu, and M. Ritala, In situ mass spectrometry study on surface reactions in atomic layer deposition of TiN and Ti(Al)N thin films, Chem. Mater., 14(1), 281 (2002).
-
(2002)
Chem. Mater.
, vol.14
, Issue.1
, pp. 281
-
-
Juppo, M.1
Rahtu, A.2
Ritala, M.3
-
184
-
-
0038201061
-
Surface chemistry and film growth during TiN atomic layer deposition using TDMAT and NH3
-
J. W. Elam, M. Schuisky, J. D. Ferguson, and S. M. George, Surface chemistry and film growth during TiN atomic layer deposition using TDMAT and NH3, Thin Solid Films, 436, 145 (2003).
-
(2003)
Thin Solid Films
, vol.436
, pp. 145
-
-
Elam, J.W.1
Schuisky, M.2
Ferguson, J.D.3
George, S.M.4
-
185
-
-
36348932674
-
Surface transamination reaction for tetrakis(dimethylamido)titanium with NHxterminated Si(100) surfaces
-
J. C. F. Rodriguez-Reyes and A. V. Teplyakov, Surface transamination reaction for tetrakis(dimethylamido)titanium with NHxterminated Si(100) surfaces, J. Phys. Chem. C, 111(44), 16498 (2007).
-
(2007)
J. Phys. Chem. C
, vol.111
, Issue.44
, pp. 16498
-
-
Rodriguez-Reyes, J.C.F.1
Teplyakov, A.V.2
-
186
-
-
84857267272
-
In situ gas phase diagnostic for titanium nitride atomic layer deposition
-
J. E. Maslar, W. A. Kimes, and B. A. Sperling, In situ gas phase diagnostic for titanium nitride atomic layer deposition, ECS Trans., 41(2), 157 (2011).
-
(2011)
ECS Trans.
, vol.41
, Issue.2
, pp. 157
-
-
Maslar, J.E.1
Kimes, W.A.2
Sperling, B.A.3
-
187
-
-
44349148903
-
Tantalum nitride atomic layer deposition using (tert-butylimido) tris(diethylamido)tantalum and hydrazine
-
B. B. Burton, A. R. Lavoie, and S. M. George, Tantalum nitride atomic layer deposition using (tert-butylimido) tris(diethylamido)tantalum and hydrazine, J. Electrochem. Soc., 155(7), D508 (2008).
-
(2008)
J. Electrochem. Soc.
, vol.155
, Issue.7
-
-
Burton, B.B.1
Lavoie, A.R.2
George, S.M.3
-
188
-
-
0033891630
-
Atomic layer deposition of tungsten nitride films using sequential surface reactions
-
J. W. Klaus, S. J. Ferro, and S. M. George, Atomic layer deposition of tungsten nitride films using sequential surface reactions, J. Electrochem. Soc., 147(3), 1175 (2000).
-
(2000)
J. Electrochem. Soc.
, vol.147
, Issue.3
, pp. 1175
-
-
Klaus, J.W.1
Ferro, S.J.2
George, S.M.3
-
189
-
-
0034247007
-
Atomically controlled growth of tungsten and tungsten nitride using sequential surface reactions
-
J. W. Klaus, S. J. Ferro, and S. M. George, Atomically controlled growth of tungsten and tungsten nitride using sequential surface reactions, Appl. Surf. Sci., 162, 479 (2000).
-
(2000)
Appl. Surf. Sci.
, vol.162
, pp. 479
-
-
Klaus, J.W.1
Ferro, S.J.2
George, S.M.3
-
190
-
-
33749608967
-
Low-temperature deposition of TiN by plasma-assisted atomic layer deposition
-
S. B. S. Heil, E. Langereis, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels, Low-temperature deposition of TiN by plasma-assisted atomic layer deposition, J. Electrochem. Soc., 153(11), G956 (2006).
-
(2006)
J. Electrochem. Soc.
, vol.153
, Issue.11
-
-
Heil, S.B.S.1
Langereis, E.2
Roozeboom, F.3
De Van Sanden, M.M.C.4
Kessels, W.M.M.5
-
191
-
-
0031547022
-
Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
-
S. Yokoyama, H. Goto, T. Miyamoto, N. Ikeda, and K. Shibahara, Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy, Appl. Surf. Sci., 112, 75 (1997).
-
(1997)
Appl. Surf. Sci.
, vol.112
, pp. 75
-
-
Yokoyama, S.1
Goto, H.2
Miyamoto, T.3
Ikeda, N.4
Shibahara, K.5
-
192
-
-
0024771873
-
Optical investigation on the growth process of GaAs during migration-enhances epitaxy
-
M. Kobayashi and Y. Horikoshi, Optical investigation on the growth process of GaAs during migration-enhances epitaxy, Jpn. J. Appl. Phys., 28(11), L1880 (1989).
-
(1989)
Jpn. J. Appl. Phys.
, vol.28
, Issue.11
-
-
Kobayashi, M.1
Horikoshi, Y.2
-
193
-
-
0009406379
-
Decomposition of trimethylgallium on the gallium-rich GaAs (100) surface: Implications for atomic layer epitaxy
-
J. R. Creighton, K. R. Lykke, V. A. Shamamian, and B. D. Kay, Decomposition of trimethylgallium on the gallium-rich GaAs (100) surface: Implications for atomic layer epitaxy, Appl. Phys. Lett., 57(3), 279 (1990).
-
(1990)
Appl. Phys. Lett.
, vol.57
, Issue.3
, pp. 279
-
-
Creighton, J.R.1
Lykke, K.R.2
Shamamian, V.A.3
Kay, B.D.4
-
194
-
-
3843113193
-
Reflectance-difference spectroscopy study of surface reactions in atomic layer epitaxy of GaAs using trimethylgallium and tertiarybutylarsine
-
B. Y. Maa and P. D. Dapkus, Reflectance-difference spectroscopy study of surface reactions in atomic layer epitaxy of GaAs using trimethylgallium and tertiarybutylarsine, Appl. Phys. Lett., 58(20), 2261 (1991).
-
(1991)
Appl. Phys. Lett.
, vol.58
, Issue.20
, pp. 2261
-
-
Maa, B.Y.1
Dapkus, P.D.2
-
195
-
-
0026124840
-
Pyrolysis of trimethylgallium on (001) GaAs surface investigated by surface photo-absorption
-
N. Kobayashi and Y. Horikoshi, Pyrolysis of trimethylgallium on (001) GaAs surface investigated by surface photo-absorption, Jpn. J. Appl. Phys., 30(3A), L319 (1991).
-
(1991)
Jpn. J. Appl. Phys.
, vol.30
, Issue.3 A
-
-
Kobayashi, N.1
Horikoshi, Y.2
-
196
-
-
51649151698
-
Reaction mechanisms of tertiarybutylarsine on GaAs (001) surfaces and its relevance to atomic layer epitaxy and chemical beam epitaxy
-
B. Y. Maa and P. D. Dapkus, Reaction mechanisms of tertiarybutylarsine on GaAs (001) surfaces and its relevance to atomic layer epitaxy and chemical beam epitaxy, J. Electron. Mater., 20(8), 589 (1991).
-
(1991)
J. Electron. Mater.
, vol.20
, Issue.8
, pp. 589
-
-
Maa, B.Y.1
Dapkus, P.D.2
-
197
-
-
0026240571
-
In situ monitoring of surface kinetics in GaAs atomic layer epitaxy by surface photo-absorption method
-
A. Koukitu, H. Ikeda, H. Suzuki, and H. Seki, In situ monitoring of surface kinetics in GaAs atomic layer epitaxy by surface photo-absorption method, Jpn. J. Appl. Phys., 30(10A), L1712 (1991).
-
(1991)
Jpn. J. Appl. Phys.
, vol.30
, Issue.10 A
-
-
Koukitu, A.1
Ikeda, H.2
Suzuki, H.3
Seki, H.4
-
198
-
-
0026256812
-
AndH. Seki, in situ gravimetric monitoring of the GaAs growth process in atomic layer epitaxy
-
A. Koukitu, H. Ikeda, H. Yasutake, andH. Seki, In situ gravimetric monitoring of the GaAs growth process in atomic layer epitaxy, Jpn. J. Appl. Phys., 30(11A), L1847 (1991).
-
(1991)
Jpn. J. Appl. Phys.
, vol.30
, Issue.11 A
-
-
Koukitu, A.1
Ikeda, H.2
Yasutake, H.3
-
199
-
-
0025840106
-
Insitu monitoring of GaAs growth process in MOVPE by surface photo-absorption method
-
N. Kobayashi, T. Makimoto, Y. Yamauchi, and Y. Horikoshi, Insitu monitoring of GaAs growth process in MOVPE by surface photo-absorption method, J. Cryst. Growth, 107, 62 (1991).
-
(1991)
J. Cryst. Growth
, vol.107
, pp. 62
-
-
Kobayashi, N.1
Makimoto, T.2
Yamauchi, Y.3
Horikoshi, Y.4
-
200
-
-
0000425204
-
Atomic layer epitaxy on (001) GaAs: Real-time spectroscopy
-
D. E. Aspnes, I. Kamiya, H. Tanaka, and R. Bhat, Atomic layer epitaxy on (001) GaAs: Real-time spectroscopy, J. Vac. Sci. Technol. B, 10(4), 1725 (1992).
-
(1992)
J. Vac. Sci. Technol. B
, vol.10
, Issue.4
, pp. 1725
-
-
Aspnes, D.E.1
Kamiya, I.2
Tanaka, H.3
Bhat, R.4
-
201
-
-
36448999269
-
In situ optical characterization of GaAs under alternating supply of GaCl and AsH3
-
K. Nishi, A. Usui, and H. Sakaki, In situ optical characterization of GaAs under alternating supply of GaCl and AsH3, Appl. Phys. Lett., 61(1), 31 (1992).
-
(1992)
Appl. Phys. Lett.
, vol.61
, Issue.1
, pp. 31
-
-
Nishi, K.1
Usui, A.2
Sakaki, H.3
-
202
-
-
0026925731
-
AndM. Mashita, Trimethylgallium reaction on As-stabilized and Ga-stabilized GaAs(100) surfaces
-
M. Sasaki, Y. Kawakyi, H. Ishikawa, andM. Mashita, Trimethylgallium reaction on As-stabilized and Ga-stabilized GaAs(100) surfaces, Jpn. J. Appl. Phys., Part 2, 31(9B), L1313 (1992).
-
(1992)
Jpn. J. Appl. Phys., Part 2
, vol.31
, Issue.9 B
-
-
Sasaki, M.1
Kawakyi, Y.2
Ishikawa, H.3
-
203
-
-
0027625855
-
Surface reaction mechanisms in GaAs atomic layer epitaxy
-
M. Mashita, M. Sasaki, Y. Kawakyu, and H. Ishikawa, Surface reaction mechanisms in GaAs atomic layer epitaxy, J. Cryst. Growth, 131, 61 (1993).
-
(1993)
J. Cryst. Growth
, vol.131
, pp. 61
-
-
Mashita, M.1
Sasaki, M.2
Kawakyu, Y.3
Ishikawa, H.4
-
204
-
-
0343809443
-
Study of surface reactions in atomic layer epitaxy of GaAs using trimethygallium by reflectance difference spectroscopy and mass spectroscopy
-
B. Y. Maa and P. D. Dapkus, Study of surface reactions in atomic layer epitaxy of GaAs using trimethygallium by reflectance difference spectroscopy and mass spectroscopy, Thin Solid Films, 225, 12 (1993).
-
(1993)
Thin Solid Films
, vol.225
, pp. 12
-
-
Maa, B.Y.1
Dapkus, P.D.2
-
205
-
-
0005286988
-
Realtime optical diagnostics for measuring and controlling epitaxial growth
-
D. E. Aspnes, I. Kamiya, H. Tanaka, R. Bhat, L. T. Florez, J. P. Harbison, W. E. Quinn, M. Tamargo, S. Gregory, M. A. A. Pudensi, S. A. Schwarz, M. J. S. P. Brasil, and R. E. Nahory, Realtime optical diagnostics for measuring and controlling epitaxial growth, Thin Solid Films, 225, 26 (1993).
-
(1993)
Thin Solid Films
, vol.225
, pp. 26
-
-
Aspnes, D.E.1
Kamiya, I.2
Tanaka, H.3
Bhat, R.4
Florez, L.T.5
Harbison, J.P.6
Quinn, W.E.7
Tamargo, M.8
Gregory, S.9
Pudensi, M.A.A.10
Schwarz, S.A.11
Brasil, M.J.S.P.12
Nahory, R.E.13
-
206
-
-
0346919514
-
Surface photo-absorption study of the laser-assisted atomic layer epitaxial growth process of GaAs
-
J. P. Simko, T. Meguro, S. Iwai, K. Ozasa, Y. Aoyagi, and T. Sugano, Surface photo-absorption study of the laser-assisted atomic layer epitaxial growth process of GaAs, Thin Solid Films, 225, 40 (1993).
-
(1993)
Thin Solid Films
, vol.225
, pp. 40
-
-
Simko, J.P.1
Meguro, T.2
Iwai, S.3
Ozasa, K.4
Aoyagi, Y.5
Sugano, T.6
-
207
-
-
0347206914
-
In situ optical characterization of GaAs and InP surfaces during chloride atomic layer epitaxy
-
K. Nishi, A. Usui, and H. Sakaki, In situ optical characterization of GaAs and InP surfaces during chloride atomic layer epitaxy, Thin Solid Films, 225, 47 (1993).
-
(1993)
Thin Solid Films
, vol.225
, pp. 47
-
-
Nishi, K.1
Usui, A.2
Sakaki, H.3
-
208
-
-
0027658665
-
In situ observation of halogen-transport atomic layer epitaxy of GaAs in inert carrier gas system
-
N. Takahashi, M. Yagi, A. Koukitu, and H. Seki, In situ observation of halogen-transport atomic layer epitaxy of GaAs in inert carrier gas system, Jpn. J. Appl. Phys., Part 2, 32(9A), L1277 (1993).
-
(1993)
Jpn. J. Appl. Phys., Part 2
, vol.32
, Issue.9 A
-
-
Takahashi, N.1
Yagi, M.2
Koukitu, A.3
Seki, H.4
-
209
-
-
0028421452
-
Determination of surface chemical species in GaAs atomic layer epitaxy by in situ gravimetric monitoring
-
A. Koukitu, N. Takahashi, Y. Miura, and H. Seki, Determination of surface chemical species in GaAs atomic layer epitaxy by in situ gravimetric monitoring, Jpn. J. Appl. Phys., Part 2, 33(4B), L613 (1994).
-
(1994)
Jpn. J. Appl. Phys., Part 2
, vol.33
, Issue.4 B
-
-
Koukitu, A.1
Takahashi, N.2
Miura, Y.3
Seki, H.4
-
210
-
-
0028761994
-
Carbon incorporation mechanism in atomic layer epitaxy of GaAs and AlGaAs
-
N. Kobayashi and T. Makimoto, Carbon incorporation mechanism in atomic layer epitaxy of GaAs and AlGaAs, Appl. Surf. Sci., 82/83, 284 (1994).
-
(1994)
Appl. Surf. Sci.
, vol.82-83
, pp. 284
-
-
Kobayashi, N.1
Makimoto, T.2
-
211
-
-
0029208119
-
In situ monitoring of the growth process in GaAs atomic layer epitaxy by gravimetric and optical methods
-
A. Koukitu, N. Takahashi, and H. Seki, In situ monitoring of the growth process in GaAs atomic layer epitaxy by gravimetric and optical methods, J. Cryst. Growth, 146, 467 (1995).
-
(1995)
J. Cryst. Growth
, vol.146
, pp. 467
-
-
Koukitu, A.1
Takahashi, N.2
Seki, H.3
-
212
-
-
3843049021
-
Determination of growth parameters for atomic layer epitaxy using reflectance difference spectroscopy
-
R. Ares, C. A. Tran, and S. P. Watkins, Determination of growth parameters for atomic layer epitaxy using reflectance difference spectroscopy, Can. J. Phys. (Suppl. ), 74, S85 (1996).
-
(1996)
Can. J. Phys. (Suppl. )
, vol.74
-
-
Ares, R.1
Tran, C.A.2
Watkins, S.P.3
-
213
-
-
0030563213
-
In situ monitoring of the GaAs growth process in halogen transport atomic layer epitaxy
-
A. Koukitu, N. Takahashi, and H. Seki, In situ monitoring of the GaAs growth process in halogen transport atomic layer epitaxy, J. Cryst. Growth, 163, 180 (1996).
-
(1996)
J. Cryst. Growth
, vol.163
, pp. 180
-
-
Koukitu, A.1
Takahashi, N.2
Seki, H.3
-
214
-
-
0031546925
-
In situ monitoring of hydrogen adsorption on (001) Ga surface in GaAs atomic layer epitaxy
-
A. Koukitu and T. Taki, In situ monitoring of hydrogen adsorption on (001) Ga surface in GaAs atomic layer epitaxy, Appl. Surf. Sci., 112, 63 (1997).
-
(1997)
Appl. Surf. Sci.
, vol.112
, pp. 63
-
-
Koukitu, A.1
Taki, T.2
-
215
-
-
0031546821
-
Atomic layer epitaxy of GaAs using GaBr and GaI sources
-
T. Taki andA. Koukitu, Atomic layer epitaxy of GaAs using GaBr and GaI sources, Appl. Surf. Sci., 112, 127 (1997).
-
(1997)
Appl. Surf. Sci.
, vol.112
, pp. 127
-
-
Taki, A.1
Koukitu, T.2
-
216
-
-
0011292634
-
Growth mechanisms in atomic layer epitaxy of GaAs
-
R. Ares, S. P. Watkins, P. Yeo, G. A. Horley, P. O'Brien, and A. C. Jones, Growth mechanisms in atomic layer epitaxy of GaAs, J. Appl. Phys., 83(6), 3390 (1998).
-
(1998)
J. Appl. Phys.
, vol.83
, Issue.6
, pp. 3390
-
-
Ares, R.1
Watkins, S.P.2
Yeo, P.3
Horley, G.A.4
O'Brien, P.5
Jones, A.C.6
-
217
-
-
34547408512
-
-
PhD dissertation, University of Helsinki, Finland. Available at
-
T. Aaltonen, Atomic layer deposition of noble metal thin films, PhD dissertation, University of Helsinki, Finland. Available at http://ethesis. helsinki. fi (2005).
-
(2005)
Atomic Layer Deposition of Noble Metal Thin Films
-
-
Aaltonen, T.1
-
218
-
-
79955648158
-
Mechanism, products and growth rate of atomic layer deposition of noble metals
-
S. D. Elliott, Mechanism, products, and growth rate of atomic layer deposition of noble metals, Langmuir, 26(12), 9179 (2010).
-
(2010)
Langmuir
, vol.26
, Issue.12
, pp. 9179
-
-
Elliott, S.D.1
-
219
-
-
0041916147
-
Reactionmechanism studies on atomic layer deposition of ruthenium and platinum
-
T. Aaltonen, A. Rahtu, M. Ritala, and M. Leskelä, Reactionmechanism studies on atomic layer deposition of ruthenium and platinum, Electrochem. Solid-State Lett., 6(9), C130 (2003).
-
(2003)
Electrochem. Solid-State Lett.
, vol.6
, Issue.9
-
-
Aaltonen, T.1
Rahtu, A.2
Ritala, M.3
Leskelä, M.4
-
220
-
-
52649164485
-
Atomic layer deposition of ruthenium from RuCp2 and oxygen: Film growth and reaction mechanism studies
-
T. Aaltonen, A. Rahtu, M. Ritala, and M. Leskelä, Atomic layer deposition of ruthenium from RuCp2 and oxygen: Film growth and reaction mechanism studies, Electrochem. Soc. Proc., 2003- 08, 946 (2003).
-
(2003)
Electrochem. Soc. Proc. 2003-08
, pp. 946
-
-
Aaltonen, T.1
Rahtu, A.2
Ritala, M.3
Leskelä, M.4
-
221
-
-
67650470258
-
Surface reactions during atomic layer deposition of Pt derived from gas phase infrared spectroscopy
-
W. M. M. Kessels, H. C. M. Knoops, S. A. F. Dielissen, A. J. M. Mackus, and M. C. M. van de Sanden, Surface reactions during atomic layer deposition of Pt derived from gas phase infrared spectroscopy, Appl. Phys. Lett., 95, 013112 (2009).
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 013112
-
-
Kessels, W.M.M.1
Knoops, H.C.M.2
Dielissen, S.A.F.3
Mackus, A.J.M.4
De Van Sanden, M.M.C.5
-
222
-
-
45749146614
-
Nucleation and growth of noble metals on oxide surfaces using atomic layer deposition
-
J. W. Elam, A. V. Zimovev, M. J. Pellin, D. J. Comstock, and M. C. Hersam, Nucleation and growth of noble metals on oxide surfaces using atomic layer deposition, ECS Trans., 3(15), 271 (2007).
-
(2007)
ECS Trans.
, vol.3
, Issue.15
, pp. 271
-
-
Elam, J.W.1
Zimovev, A.V.2
Pellin, M.J.3
Comstock, D.J.4
Hersam, M.C.5
-
223
-
-
77649103871
-
Atomic layer deposition of ruthenium films on hydrogen terminated silicon
-
S. K. Park, K. Roodenko, Y. J. Chabal, L. Wielunski, R. Kanjolia, J. Anthis, R. Odedra, and N. Boag, Atomic layer deposition of ruthenium films on hydrogen terminated silicon, Mater. Res. Soc. Symp. Proc., 1156, 1156D04-02 (2009).
-
(2009)
Mater. Res. Soc. Symp. Proc.
, vol.1156
-
-
Park, S.K.1
Roodenko, K.2
Chabal, Y.J.3
Wielunski, L.4
Kanjolia, R.5
Anthis, J.6
Odedra, R.7
Boag, N.8
-
224
-
-
70350263715
-
Atomic layer deposition of iridium thin films by consecutive oxidation and reduction steps
-
J. Hämäläinen, E. Puukilainen, M. Kemell, L. Costelle, M. Ritala, and M. Leskelä, Atomic layer deposition of iridium thin films by consecutive oxidation and reduction steps, Chem. Mater., 21(20), 4868 (2009).
-
(2009)
Chem. Mater.
, vol.21
, Issue.20
, pp. 4868
-
-
Hämäläinen, J.1
Puukilainen, E.2
Kemell, M.3
Costelle, L.4
Ritala, M.5
Leskelä, M.6
-
225
-
-
45249096950
-
In-situ FTIR study of atomic layer deposition (ALD) of copper metal films
-
M. Dai, J. Kwon, E. Langereis, L. Wielunski, Y. J. Chabal, Z. Li, and R. G. Gordon, In-situ FTIR study of atomic layer deposition (ALD) of copper metal films, ECS Trans., 11(7), 91 (2007).
-
(2007)
ECS Trans.
, vol.11
, Issue.7
, pp. 91
-
-
Dai, M.1
Kwon, J.2
Langereis, E.3
Wielunski, L.4
Chabal, Y.J.5
Li, Z.6
Gordon, R.G.7
-
226
-
-
77956413575
-
Surface and interface processes during atomic layer deposition of copper on silicon oxide
-
M. Dai, J. Kwon, M. D. Halls, R. G. Gordon, and Y. J. Chabal, Surface and interface processes during atomic layer deposition of copper on silicon oxide, Langmuir, 26(6), 3911 (2010).
-
(2010)
Langmuir
, vol.26
, Issue.6
, pp. 3911
-
-
Dai, M.1
Kwon, J.2
Halls, M.D.3
Gordon, R.G.4
Chabal, Y.J.5
-
227
-
-
33750811388
-
Atomic layer deposition of palladium films on Al2O3 surfaces
-
J. W. Elam, A. Zinovev, C. Y. Han, H. H. Wang, Y. Welp, J. N. Hryn, and M. J. Pellin, Atomic layer deposition of palladium films on Al2O3 surfaces, Thin Solid Films, 515, 1664 (2006).
-
(2006)
Thin Solid Films
, vol.515
, pp. 1664
-
-
Elam, J.W.1
Zinovev, A.2
Han, C.Y.3
Wang, H.H.4
Welp, Y.5
Hryn, J.N.6
Pellin, M.J.7
-
228
-
-
70349934313
-
Enhancing the nucleation of palladium atomic layer deposition on Al2O3 using trimethylaluminum to prevent surface poisoning by reaction products
-
D. N. Goldstein and S. M. George, Enhancing the nucleation of palladium atomic layer deposition on Al2O3 using trimethylaluminum to prevent surface poisoning by reaction products, Appl. Phys. Lett., 95, 143106 (2009).
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 143106
-
-
Goldstein, D.N.1
George, S.M.2
-
229
-
-
0034140916
-
Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction
-
J. W. Klaus, S. J. Ferro, and S. M. George, Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction, Thin Solid Films, 360, 145 (2000).
-
(2000)
Thin Solid Films
, vol.360
, pp. 145
-
-
Klaus, J.W.1
Ferro, S.J.2
George, S.M.3
-
230
-
-
4944245124
-
Gas phase reaction products during tungsten atomic layer deposition using WF6 and Si2H6
-
R. K. Grubbs, N. J. Steinmetz, and S. M. George, Gas phase reaction products during tungsten atomic layer deposition using WF6 and Si2H6, J. Vac. Sci. Technol. B, 22(4), 1811 (2004).
-
(2004)
J. Vac. Sci. Technol. B
, vol.22
, Issue.4
, pp. 1811
-
-
Grubbs, R.K.1
Steinmetz, N.J.2
George, S.M.3
-
231
-
-
23044438666
-
Quartz crystal microbalance study of tungsten atomic layer deposition using WF6 and Si2H6
-
F. H. Fabreguette, Z. A. Sechrist, J. W. Elam, and S. M. George, Quartz crystal microbalance study of tungsten atomic layer deposition using WF6 and Si2H6, Thin Solid Films, 488, 103 (2005).
-
(2005)
Thin Solid Films
, vol.488
, pp. 103
-
-
Fabreguette, F.H.1
Sechrist, Z.A.2
Elam, J.W.3
George, S.M.4
-
232
-
-
34047169417
-
Realtime sensing andmetrology for atomic layer deposition processes and manufacturing
-
L. Henn-Lecordier, W. Lei, M. Anderle, and G. W. Rubloff, Realtime sensing andmetrology for atomic layer deposition processes and manufacturing, J. Vac. Sci. Technol. B, 25(1), 130 (2007).
-
(2007)
J. Vac. Sci. Technol. B
, vol.25
, Issue.1
, pp. 130
-
-
Henn-Lecordier, L.1
Lei, W.2
Anderle, M.3
Rubloff, G.W.4
-
233
-
-
78751517370
-
Atomic layer deposition of antimony and its compounds using dechlorosilylation reactions of tris(triethylsilyl)antimony
-
V. Pore, K. Knapas, T. Hatanpä̈a, T. Sarnet, M. Kemell, M. Ritala, M. Leskelä, and K. Mizohata, Atomic layer deposition of antimony and its compounds using dechlorosilylation reactions of tris(triethylsilyl) antimony, Chem. Mater., 23(2), 247 (2011).
-
(2011)
Chem. Mater.
, vol.23
, Issue.2
, pp. 247
-
-
Pore, V.1
Knapas, K.2
Hatanpä̈a, T.3
Sarnet, T.4
Kemell, M.5
Ritala, M.6
Leskelä, M.7
Mizohata, K.8
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