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Applied Surface Science

Volumn 107, Issue , 1996, Pages 128-136

Atomic layer controlled deposition of Al 2 O 3 films using binary reaction sequence chemistry

(5) Ott, A W a McCarley, K C b Klaus, J W a Way, J D b George, S M a

a UNIVERSITY OF COLORADO (United States)

b Department of Geology and Geological Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; FILM GROWTH; POROSITY; POROUS MATERIALS; REFRACTIVE INDEX; SINGLE CRYSTALS; SURFACE ROUGHNESS;

ATOMIC LAYERED CONTROLLED DEPOSITION; BINARY REACTION SEQUENCE; TRIMETHYLALUMINUM;

ALUMINA;

EID: 0030566216 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(96)00503-X Document Type: Article

Times cited : (128)

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