Monocrystalline films of sphalerite-type ZnSe grown by atomic layer epitaxy in a gas flow system

Journal of Crystal Growth

Volumn 207, Issue 1, 1999, Pages 148-149

  Szczerbakow, A ^a   Dynowska, E ^a   Swiatek K ^a   Godlewski, M ^a  

^a INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SELENIUM; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SILICA;

ATOMIC LAYER EPITAXY (ALE); ZINC SELENIDE; ZINC SULFIDE;

SEMICONDUCTING FILMS;

EID: 0033328951     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00443-1     Document Type: Article

References (4)

1. Szczerbakow A., Dynowska E., Godlewski M., Światek K. J. Crystal Growth. 183:1998;708.
2. Szczerbakow A., Godlewski M., Dynowska E., Ivanov V.Yu., Światek K., Goldys E.M., Phillips M.R. Acta Phys. Pol. 94:1998;579.
3. Hsu C.T. Thin Solid Films. 335:1998;284.
4. Roppischer H., Jacobs J., Novikov B.V. Phys. Stat. Sol. A. 27:1975;123.