Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy

Applied Surface Science

Volumn 112, Issue , 1997, Pages 75-81

  Yokoyama, Shin ^a   Goto, Hiroshi ^a   Miyamoto, Takahiro ^a   Ikeda, Norihiko ^a   Shibahara, Kentaro ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMS; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; MAGNETIC FIELD EFFECTS; PLASMAS; SEMICONDUCTING SILICON; SILICA; SILICON NITRIDE; SUBSTRATES; SURFACE ROUGHNESS;

ATOMIC LAYER DEPOSITION; FOURIER TRANSFORM INFRARED REFLECTION ABSORPTION SPECTROSCOPY;

CHEMICAL VAPOR DEPOSITION;

EID: 0031547022     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)01020-3     Document Type: Article

References (6)

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