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Volumn 98, Issue 23, 2011, Pages

In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates

(6) Devloo Casier, K a Dendooven, J a Ludwig, K F b Lekens, G c D'Haen, J c Detavernier, C a

a GHENT UNIVERSITY (Belgium)

b USA (United States)

c HASSELT UNIVERSITY (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITED MATERIALS; FILM ROUGHNESS; GE SUBSTRATES; GE SURFACES; GI-SAXS; GRAZING INCIDENCE SMALL-ANGLE X-RAY SCATTERING; IN-SITU; IN-SITU SYNCHROTRONS; SCATTERING MEASUREMENTS; TETRAKIS; X RAY FLUORESCENCE;

ATOMIC LAYER DEPOSITION; FLUORESCENCE; GERMANIUM; HAFNIUM; HAFNIUM OXIDES; SCATTERING; SURFACE ROUGHNESS; SYNCHROTRONS;

X RAYS;

EID: 79959357998 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3598433 Document Type: Article

Times cited : (28)

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