Reflection mass spectrometry studies on UHV ALE of Cd 1-x Zn x Te (0 ≤ x ≤ 1) compounds

Applied Surface Science

Volumn 112, Issue , 1997, Pages 148-153

  Sadowski, J T ^a   Herman, M A ^a  

^a INSTITUTE OF VACUUM TECHNOLOGY   (Poland)

Author keywords

Atomic layer epitaxy; Reflection mass spectrometry; Thin film heteroepitaxy

Indexed keywords

CHEMISORPTION; EVAPORATION; IONS; MASS SPECTROMETRY; MOLECULES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SEMICONDUCTING TELLURIUM COMPOUNDS; SURFACE STRUCTURE; VACUUM;

ATOMIC LAYER EPITAXY; REFLECTION MASS SPECTROMETRY;

EPITAXIAL GROWTH;

EID: 0031546826     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)01002-1     Document Type: Article

References (10)

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2. J.Y. Tsao, Materials Fundamentals of MBE (Academic, Harcourt Brace, Jovanovich, Boston, 1993).
3. H. Sitter and W. Faschinger, Festkörperprobleme 30 (1990) 219.
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5. T.M. Brennan, J.Y. Tsao and B.E. Hammons, J. Vac. Sci. Technol. A 10(1) (1992) 33.
6. Y. Takemura, M. Konagai, H. Nakanishi and K. Takahashi, J. Cryst. Growth 117 (1992) 144.
7. T. Yao and T. Takeda, Appl. Phys. Lett. 48(2) (1986), 160.
8. M.A. Herman, P. Juza, W. Faschinger and H. Sitter, Crys. Res. Technol. 23 (1988) 307.
9. S. Tatarenko, B. Daudin and D. Brun-Le Cunff, Appl. Phys. Lett. 66 (1995) 1773.
10. P. Juza, H. Sitter and M.A. Herman, Appl. Phys. Lett. 53(15) (1988) 1396.