In-situ infrared absorption monitoring of atomic layer deposition of metal oxides on functionalized si and ge surfaces

Materials Research Society Symposium Proceedings

Volumn 996, Issue , 2007, Pages 145-150

  Dai, Min ^a   Kwon, Jinhee ^a   Ho, Ming Tsung ^a   Wang, Yu ^a   Rivillon, Sandrine ^a   Li, Meng ^a   Chabal, Yves Jean ^a   Boleslawski, Marek ^b  

^a RUTGERS UNIVERSITY   (United States)

^b SAFC Hitech   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC LAYER DEPOSITION; CMOS INTEGRATED CIRCUITS; GERMANIUM; HAFNIUM OXIDES; HIGH-K DIELECTRIC; LIGHT ABSORPTION; MOSFET DEVICES; SILICA; SILICON;

CHEMICAL FUNCTIONALIZATION; FUNCTIONALIZED; GE SUBSTRATES; GE SURFACES; INTERFACIAL LAYER; METAL PRECURSOR; OXYGEN PRECURSORS; PRECLEANING;

GROWTH RATE;

EID: 70349925830     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0996-h07-04     Document Type: Conference Paper

References (10)

1. International Technology Roadmap for Semiconductors web site: http://www.itrs.net/
2. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
3. C. Y. Kang, S. J. Rhee, C. H. Choi, M. S. Akvar, M. Zhang, T. Lee, I. Ok, and J. C. Lee, Appl. Phys. Lett. 86, 012901 (2005).
4. Y. Xuan, P. D. Ye, H. C. Lin, and G. D. Wilk, Appl. Phys. Lett. 89, 132103 (2006).
5. M. Ritala and M. Leskela, in Handbook of Thin Film Materials, Vol. 1, edited by H. S. Nalwa (Academic, New York, 2002).
6. G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Raghavachari, Appl. Phys. Lett. 56, 656 (1990).
7. S. Rivillon, Y. J. Chabal, L. J. Webb, D. J. Michalak, N. S. Lewis, M. D. Halls, and K. Raghavachaari, J. Vac. Sci. Technol. A 23, 1100 (2005).
8. H. Tachuchi and T. J. King, Appl. Phys. Lett. 83, 788 (2003).
9. S. Rivillon and Y. J. Chabal, Appl. Phys. Lett. 87, 253101 (2005).
10. Y. Wang, M. Dai, M,-T. Ho, L. S. Wielunski, and Y. J. Chabal, Appl. Phys. Lett. 90, 022906 (2007).