GaPO4 sensors for gravimetric monitoring during atomic layer deposition at high temperatures

Analytical Chemistry

Volumn 77, Issue 11, 2005, Pages 3531-3535

  Elam, J W ^a   Pellin, M J ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCY STABILITY; GRAVIMETRIC ANALYSIS; HIGH TEMPERATURE EFFECTS; PIEZOELECTRIC MATERIALS; QUARTZ; SENSORS; THIN FILMS; WATER;

ATOMIC LAYER DEPOSITION (ALD); TEMPERATURE COEFFICIENTS; TITANIUM TETRACHLORIDE; VISCOUS FLOWS;

GALLIUM COMPOUNDS;

ALUMINUM DERIVATIVE; GALLIUM; GALLIUM PHOSPHATE; HELIUM; SILICON DIOXIDE; TITANIUM TETRACHLORIDE; UNCLASSIFIED DRUG; WATER; ALUMINUM OXIDE; ORGANOMETALLIC COMPOUND; PHOSPHATE; TITANIUM; TITANIUM DIOXIDE;

ARTICLE; ATOMIC PARTICLE; CRYSTAL; FILM; GRAVIMETRY; HIGH TEMPERATURE; MEASUREMENT; PIEZOELECTRICITY; VISCOSITY; ARTIFICIAL MEMBRANE; CHEMISTRY; ELECTRODE; SURFACE PROPERTY; TEMPERATURE; TIME;

ALUMINUM OXIDE; ELECTRODES; GALLIUM; HELIUM; MEMBRANES, ARTIFICIAL; ORGANOMETALLIC COMPOUNDS; PHOSPHATES; QUARTZ; SURFACE PROPERTIES; TEMPERATURE; TIME FACTORS; TITANIUM; WATER;

EID: 20444380758     PISSN: 00032700     EISSN: None     Source Type: Journal    
DOI: 10.1021/ac050349a     Document Type: Article

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