Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO 2 and ZrO 2 thin films

Applied Surface Science

Volumn 252, Issue 16, 2006, Pages 5723-5734

  Aarik, Jaan ^a   Aidla, Aleks ^a   Kasikov, Aarne ^a   Mändar, Hugo ^a   Rammula, Raul ^a   Sammelselg, Väino ^a  

^a UNIVERSITY OF TARTU   (Estonia)

Author keywords

Atomic layer deposition; Crystal structure; Hafnium dioxide; Optical properties; Surface reactions; Zirconium dioxide

Indexed keywords

CHLORINE; CRYSTALS; NITROGEN; QUARTZ; REAL TIME SYSTEMS; REFRACTIVE INDEX; SURFACE REACTIONS; THIN FILMS; ZIRCONIUM COMPOUNDS;

ATOMIC LAYER; ATOMIC LAYER DEPOSITION; CARRIER GAS PRESSURE; FLOW RATE; HAFNIUM DIOXIDE; ZIRCONIUM DIOXIDE;

HYDROGEN INORGANIC COMPOUNDS;

EID: 33744521607     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.07.067     Document Type: Article

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