Preparation of Al2O3 Thin Films by Atomic Layer Deposition Using Dimethylaluminum Isopropoxide and Water and Their Reaction Mechanisms

Bulletin of the Korean Chemical Society

Volumn 24, Issue 11, 2003, Pages 1659-1663

  An, Ki Seok ^a   Cho, Wontae ^a   Sung, Kiwhan ^a   Lee, Sun Sook ^a   Kim, Yunsoo ^a  

^a Korea Research Institute of Chemical Technology   (South Korea)

Author keywords

Aluminum oxide; Atomic layer deposition (ALD); Dimethylaluminum isopropoxide; Surface chemical reaction

Indexed keywords

ALUMINUM DERIVATIVE; ALUMINUM OXIDE; DIMETHYLALUMINUM ISOPROPOXIDE; SILICON DERIVATIVE; UNCLASSIFIED DRUG;

ARTICLE; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CHEMICAL REACTION; FILM; MASS SPECTROMETRY; REACTION ANALYSIS; ROOM TEMPERATURE; STOICHIOMETRY; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PRESSURE; VOLATILIZATION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0345743647     PISSN: 02532964     EISSN: None     Source Type: Journal    
DOI: 10.5012/bkcs.2003.24.11.1659     Document Type: Article

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