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Volumn 387, Issue 1-2, 2001, Pages 29-32
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Atomic layer deposition of zinc oxide and indium sulfide layers for Cu(In, Ga)Se2 thin-film solar cells
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Author keywords
Atomic layer deposition; Cu(In, Ga)Se2; In2S3 buffer layer; Thin film
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Indexed keywords
AMORPHOUS FILMS;
ANNEALING;
COMPOSITION EFFECTS;
COPPER COMPOUNDS;
CRYSTALLIZATION;
DEPOSITION;
DOPING (ADDITIVES);
ENERGY GAP;
INDIUM COMPOUNDS;
MONOLAYERS;
QUARTZ;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
THIN FILMS;
ZINC OXIDE;
ATOMIC LAYER DEPOSITION;
QUARTZ CRYSTAL MICROGRAVIMETRY (QCM);
SOLAR CELLS;
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EID: 0035967555
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(00)01838-1 Document Type: Article |
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Times cited : (130)
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References (8)
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