In situ gas phase diagnostics for hafnium oxide atomic layer deposition

ECS Transactions

Volumn 13, Issue 2, 2008, Pages 139-149

  Maslar, J E ^a   Hurst, W S ^a   Burgess, D R ^a   Kimes, W A ^a   Nguyen, N V ^a   Moore, E F ^a   Hodges, J T ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATIONS.; ATOMIC LAYER DEPOSITION (ALD; ATOMIC LAYERS; DEPOSITION CONDITIONS; DIODE LASER SPECTROSCOPIES; FLOW REACTORS; FOURIER TRANSFORM INFRARED; GAS PHASE; HAFNIUM OXIDES; HIGH-K DIELECTRICS; IN SITU DIAGNOSTICS; IN SITU MONITORING; IN-SITU; SURFACE PROCESSES; TETRAKIS; WAFER SURFACES;

ATOMIC PHYSICS; ATOMS; BLOOD VESSEL PROSTHESES; DEPOSITION; DIELECTRIC MATERIALS; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; GAS DYNAMICS; GASES; GROWTH (MATERIALS); HAFNIUM; HAFNIUM COMPOUNDS; INFRARED SPECTROSCOPY; LASER SPECTROSCOPY; MATERIALS; MATERIALS SCIENCE; NANOSYSTEMS; OXIDES; PHYSICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; RELIABILITY; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS;

ATOMIC LAYER DEPOSITION;

EID: 55849100743     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2908626     Document Type: Conference Paper

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