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Thin Solid Films

Volumn 335, Issue 1-2, 1998, Pages 284-291

Epitaxial growth of II-VI compound semiconductors by atomic layer epitaxy

a NATIONAL FORMOSA UNIVERSITY (Taiwan)

Author keywords

Atomic layer epitaxy (ALE); ZnS; ZnSxSe1 x; ZnSe; ZnSe ZnS strained layer superlattice

Indexed keywords

EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; ZINC SULFIDE;

ATOMIC LAYER EPITAXY (ALE); ZINC SELENIDE;

SEMICONDUCTOR GROWTH;

EID: 0032315596 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)00950-X Document Type: Article

Times cited : (47)

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