Mechanism, products, and growth rate of atomic layer deposition of noble metals

Langmuir

Volumn 26, Issue 12, 2010, Pages 9179-9182

  Elliott, Simon D ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL EXPRESSIONS; GROWTH REACTIONS; HOMOLEPTIC; HYDROXYL GROUPS; NOBLE METALS; PRODUCT RATIOS; REDOX DECOMPOSITION;

ATOMIC LAYER DEPOSITION; IRIDIUM; LIGANDS; OSMIUM; OXYGEN; PLATINUM; PRECIOUS METALS; RHODIUM;

PALLADIUM;

EID: 79955648158     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la101207y     Document Type: Article

References (18)

1. Aaltonen, T.; Alen, P.; Ritala, M.; Leskelä, M. Chem. Vap. Deposition 2003, 9, 45-49.
2. Aaltonen, T.; Ritala, M.; Arstila, K.; Keinonen, J.; Leskelä, M. Chem. Vap. Deposition 2004, 10, 215-219.
3. Wang, H. T.; Gordon, R. G.; Alvis, R.; Ulfig, R. M. Chem. Vap. Deposition 2009, 15, 312-319.
4. Aaltonen, T.; Ritala, M.; Sajavaara, T.; Keinonen, J.; Leskelä, M. Chem. Mater. 2003, 15, 1924-1928.
5. Hamalainen, J.; Munnik, F.; Ritala, M.; Leskelä, M. Chem. Mater. 2008, 20, 6840-6846.
6. Aaltonen, T.; Ritala, M.; Leskelä, M. Electrochem. Solid-State Lett. 2005, 8, C99-C101.
7. Aaltonen, T.; Ritala, M.; Sammelselg, V.; Leskelä, M. J. Electrochem. Soc. 2004, 151, G489-G492.
8. Aaltonen, T.; Rahtu, A.; Ritala, M.; Leskelä, M. Electrochem. Solid-State Lett. 2003, 6, C130.
9. Park, K. J.; Terry, D. B.; Stewart, S. M.; Parsons, G. N. Langmuir 2007, 23, 6106-6112.
10. Knapas, K.; Ritala, M. Chem. Mater. 2008, 20, 5698.
11. Kessels, W. M. M.; Knoops, H. C. M.; Dielissen, S. A. F.; Mackus, A. J. F.; van de Sanden, M. C. M. Appl. Phys. Lett. 2009, 95, 013114.
12. Prechtl, G.; Kersch, A.; Schulze Icking-Konert, G.; Jacobs, W.; Hecht, T.; Boubekeur, H.; Schroeder, U. IEDM Tech. Dig. 2003, 245-248.
13. Elliott, S. D.; Scarel, G.; Wiemer, C.; Fanciulli, M.; Pavia, G. Chem. Mater. 2006, 18, 3764.
14. This approach can be extended to O- and N-containing ligands, but this is not detailed here.
15. Eisert, F. Elg; A. P.; Rosen, A. Appl. Phys. A: Mater. Sci. Process. 1995, 60, 209-215.
16. Shavorskiy, A.; Gladys, M. J.; Held, G. Phys. Chem. Chem. Phys. 2008, 10, 6150-6159.
17. M, where a is the |M;M| distance along [111], or assuming the bulk density for the as-deposited film the fcc lattice constant, a = 2.6-2.7 A °.
18. Park, S. J.; Kim, W. H.; Maeng, W. J.; Yang, Y. S.; Park, C. G.; Kim, H.; Lee, K. N.; Jung, S. W.; Seong, W. K. Thin Solid Films 2008, 516, 7345-7349.