Atomic layer deposition of Ge2Sb2Te5 thin films

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1946-1949

  Ritala, Mikko ^a   Pore, Viljami ^a   Hatanpää, Timo ^a   Heikkilä, Mikko ^a   Leskelä, Markku ^a   Mizohata, Kenichiro ^a   Schrott, Alejandro ^b   Raoux, Simone ^c   Rossnagel, Stephen M ^b  

^a UNIVERSITY OF HELSINKI   (Finland)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

Atomic layer deposition; Germanium antimony telluride; Phase change

Indexed keywords

CRYSTALLIZATION PROPERTIES; DEPOSITED FILMS; ELASTIC RECOIL DETECTION ANALYSIS; FILM COMPOSITION; HIGH TEMPERATURE X-RAY DIFFRACTION; PHASE CHANGE; PHASE CHANGE PROPERTY; TIME OF FLIGHT;

ANTIMONY; ATOMS; CRYSTALLIZATION; GERMANIUM; SYSTEM THEORY; TELLURIUM; TELLURIUM COMPOUNDS; THIN FILMS;

ATOMIC LAYER DEPOSITION;

EID: 67349117674     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.014     Document Type: Article

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