Tetrakis(dimethylamido)hafnium adsorption and reaction on hydrogen terminated Si(100) surfaces

Journal of Physical Chemistry C

Volumn 114, Issue 33, 2010, Pages 14061-14075

  Li, Kejing ^a,b   Li, Shenggang ^a,c   Li, Ning ^a,b   Dixon, David A ^a,c   Klein, Tonya M ^a,b  

^a UNIVERSITY OF ALABAMA   (United States)

^b Chemical Engineering Department   (United States)

^c Chemistry Department   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION AND REACTIONS; ATR FTIR; ATTENUATED TOTAL REFLECTANCE FOURIER TRANSFORM INFRARED SPECTROSCOPY; BOND DISSOCIATION ENERGIES; CCSD; COUPLED-CLUSTER CALCULATIONS; DECOMPOSITION PRODUCTS; DENSITY FUNCTIONAL THEORY CALCULATIONS; DFT CALCULATION; DIMETHYLAMIDO; DIMETHYLAMINES; EXCHANGE REACTION; GAS-PHASE DECOMPOSITION; GAS-PHASE REACTIONS; H SI(100); H-BONDS; HYDRIDE ELIMINATION; IN-SITU; INTERNAL REFLECTANCE; QUADRUPOLE MASS SPECTROMETRY; RING SPECIES; SI SURFACES; SI(1 0 0); SI(100) SURFACE; SILICON SURFACES; TETRAKIS; THEORETICAL RESULT;

ADSORPTION; CHEMICAL BONDS; CHEMISORPTION; DECOMPOSITION; DENSITY FUNCTIONAL THEORY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; GASES; GERMANIUM; HAFNIUM; HYDROGEN; MASS SPECTROMETRY; REFLECTION; SURFACE REACTIONS; TERNARY SYSTEMS;

SILICON;

EID: 77955909528     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp101363r     Document Type: Article

References (92)

1. International Technology Roadmap for Semiconductors 2009 FEP. http://www.itrs.net/Links/2009ITRS/2009Chapters-2009Tables/2009-FEP.pdf.
2. Robertson, J. Rep. Prog. Phys. 2006, 69, 327
3. Williams, P. A.; Jones, A. C.; Tobin, N. L.; Chalker, P. R.; Taylor, S.; Marshall, P. A.; Bickley, J. F.; Smith, L. M.; Davies, H. O.; Critchlow, G. W. Chem. Vap. Deposition 2003, 9, 309
4. Zoolfakar, A. S.; Hashim, H.; Taylor, S. 9th International Conference Solid-State and Integrated Circuit Technology, Beijing, China, 2008; IEEE: Beijing, 2008; p 1268.
5. Wang, Y.; Ho, M. T.; Goncharova, L. V.; Wielunski, L. S.; Rivillon-Amy, S.; Chabal, Y. J.; Gustafsson, T.; Moumen, N.; Boleslawski, M. Chem. Mater. 2007, 19, 3127
6. Ganem, J. J.; Trimaille, I.; Vickridge, I. C.; Blin, D.; Martin, F. Nucl. Instrum. Methods Phys. Res., Sect. B: Beam Interact. Mater. At. 2004, 219-220, 856
7. Milanov, A.; Thomas, R.; Hellwig, M.; Merz, K.; Becker, H.-W.; Ehrhart, P.; Fischer, R. A.; Waser, R.; Devi, A. Surf. Coat. Technol. 2007, 201, 9019
8. Deshpande, A.; Inman, R.; Jursich, G.; Takoudis, C. Microelectron. Eng. 2006, 83, 547
9. Kukli, K.; Ritala, M.; Sajavaara, T.; Keinonen, J.; Leskelä M. Chem. Vap. Deposition 2002, 8, 199
10. Zhong, L.; Zhang, Z.; Campbell, S. A.; Gladfelter, W. L. J. Mater. Chem. 2004, 14, 3203
11. Hausmann, D. M.; Gordon, R. G. J. Cryst. Growth 2003, 249, 251
12. Green, X. L.; Allen, A. J.; Li, X.; Wang, J.; Ilavsky, J.; Delabie, A.; Puurunen, R. L.; Brijs, B. Appl. Phys. Lett. 2006, 88 032907
13. Hackley, J. C.; Demaree, J. D.; Gougousi, T. J. Vac. Sci. Technol., A 2008, 26, 1235
14. Chen, S. C.; Lou, J. C.; Chien, C. H.; Liu, P. T.; Chang, T. C. Thin Solid Films 2005, 488, 167
15. Deshpande, A.; Inman, R.; Jursich, G.; Takoudis, C. Microelectron. Eng. 2006, 83, 547
16. George, S. Chem. Rev. 2010, 110, 111
17. Puurunen, R. J. Appl. Phys. 2005, 97, 121301
18. Elam, J. W.; Schuisky, M.; Ferguson, J. D.; George, S. M. Thin Solid Films 2003, 436, 145
19. Hyde, G. K.; Scarel, G.; Spagnola, J. C.; Peng, Q.; Lee, K.; Gong, B.; Roberts, K. G.; Roth, K. M.; Hanson, C. A.; Devine, C. K.; Stewart, S. M.; Hojo, D.; Na, J.-S.; Jur, J. S.; Parsons, G. N. Langmuir 2010, 26, 2550
20. Ortiz, R. P.; Facchetti, A.; Marks, T. J. Chem. Rev. 2010, 110, 205
21. Rinkiö M.; Johansson, A.; Paraoanu, G. S.; Törmä P. Nano Lett. 2009, 9, 644
22. Kan, B.-C.; Boo, J.-H.; Lee, I.; Zaera, F. J. Phys. Chem. A 2009, 113, 3946
23. Wang, W.; Nabatame, T.; Shimogaki, Y. Jpn. J. Appl. Phys. 2006, 45, L1183
24. Biecuk, M. J.; Monsma, D. J.; Marcus, C. M.; Becker, J. S.; Gordon, R. G. Appl. Phys. Lett. 2003, 83, 2405
25. Kelly, M. J.; Han, J. H.; Musgrave, C. B.; Parsons, G. N. Chem. Mater. 2005, 17, 5305
26. Ho, M. T.; Wang, Y.; Brewer, R. T.; Wielunski, L. S.; Chabal, Y. J.; Moumen, N.; Boleslawski, M. Appl. Phys. Lett. 2005, 87, 133103
27. Chen, W.; Sun, Q. Q.; Xu, M.; Ding, S. J.; Zhang, D. W.; Wang, L. K. J. Phys. Chem. C 2007, 111, 6495
28. Rodriguez-Reyes, J. C. F.; Teplyakov, A. V. J. Phys. Chem. C 2007, 111, 4800
29. Wu, C. J.; Carter, E. A. Chem. Phys. Lett. 1991, 185, 172
30. Dubois, L. H.; Zegarski, B. R.; Girolami, G. S. J. Electrochem. Soc. 1992, 139, 3603
31. Driessen, J. P. A. M.; Schoonman, J.; Jensen, K. F. J. Electrochem. Soc. 2001, 148, G178
32. Norton, E. T.; Amato-Wierda, C. Chem. Mater. 2001, 13, 4655
33. Musher, J. N.; Gordon, R. G. J. Mater. Res. 1996, 11, 989
34. Salim, S.; Lim, C. K.; Jensen, K. F. Chem. Mater. 1995, 7, 507
35. Cai, H.; Yu, X.; Chen, S.; Qiu, H.; Guzei, I. A.; Xue, Z. L. Inorg. Chem. 2007, 46, 8071
36. Chabal, Y. J.; Raghavachari, K. Phys. Rev. Lett. 1985, 54, 1055
37. Chabal, Y. J.; Raghavachari, K. Phys. Rev. Lett. 1984, 53, 282
38. Higashi, G. S.; Chabal, Y. J.; Trucks, G. W.; Krishnan, R. Appl. Phys. Lett. 1990, 56, 656
39. http://www.inficongasanalyzers.com/en/pdf/Optimization-of-Electron- Energy.pdf.
40. Inficon 200 Quadrex residual gas analyzer with High Performance and Compact Sensors: http://www.schoonoverinc.com/PDFs/074-334D%20 TWare%2032%20OM.pdf.
41. Frisch, M. J.; Trucks, G. W.; Schlegel, H. B.; Scuseria, G. E.; Robb, M. A.; Cheeseman, J. R.; Montgomery, J. A., Jr.; Vreven, T.; Kudin, K. N.; Burant, J. C.; Millam, J. M.; Iyengar, S. S.; Tomasi, J.; Barone, V.; Mennucci, B.; Cossi, M.; Scalmani, G.; Rega, N.; Petersson, G. A.; Nakatsuji, H.; Hada, M.; Ehara, M.; Toyota, K.; Fukuda, R.; Hasegawa, J.; Ishida, M.; Nakajima, T.; Honda, Y.; Kitao, O.; Nakai, H.; Klene, M.; Li, X.; Knox, J. E.; Hratchian, H. P.; Cross, J. B.; Bakken, V.; Adamo, C.; Jaramillo, J.; Gomperts, R.; Stratmann, R. E.; Yazyev, O.; Austin, A. J.; Cammi, R.; Pomelli, C.; Ochterski, J. W.; Ayala, P. Y.; Morokuma, K.; Voth, G. A.; Salvador, P.; Dannenberg, J. J.; Zakrzewski, V. G.; Dapprich, S.; Daniels, A. D.; Strain, M. C.; Farkas, O.; Malick, D. K.; Rabuck, A. D.; Raghavachari, K.; Foresman, J. B.; Ortiz, J. V.; Cui, Q.; Baboul, A. G.; Clifford, S.; Cioslowski, J.; Stefanov, B. B.; Liu, G.; Liashenko, A.; Piskorz, P.; Komaromi, I.; Martin, R. L.; Fox, D. J.; Keith, T.; Al-Laham, M. A.; Peng, C. Y.; Nanayakkara, A.; Challacombe, M.; Gill, P. M. W.; Johnson, B.; Chen, W.; Wong, M. W.; Gonzalez, C.; Pople, J. A. Gaussian 03, revision E.01; Gaussian, Inc.: Wallingford, CT, 2004.
42. Axel, D. B. J. Chem. Phys. 1993, 98, 5648
43. Lee, C.; Yang, W.; Parr, R. G. Phys. Rev. B 1988, 37, 785
44. Peng, C.; Ayala, P. Y.; Schlegel, H. B.; Frisch, M. J. J. Comput. Chem. 1996, 17, 49
45. Peng, C.; Schlegel, H. B. Isr. J. Chem. 1993, 33, 449
46. Schlegel, H. B. J. Comput. Chem. 1982, 3, 214
47. Wadt, W. R.; Hay, P. J. J. Chem. Phys. 1985, 82, 284
48. Dunning, T. H. J. Chem. Phys. 1989, 90, 1007
49. Kendall, R. A.; Dunning, T. H.; Harrison, R. J. J. Chem. Phys. 1992, 96, 6796
50. Woon, D. E.; Dunning, T. H. J. Chem. Phys. 1993, 98, 1358
51. Figgen, D.; Peterson, K. A.; Dolg, M.; Stoll, H. J. Chem. Phys. 2009, 130, 164108
52. Li, S.; Dixon, D. A. J. Phys. Chem. A 2007, 111, 11908
53. Purvis, G. D., III; Bartlett, R. J. J. Chem. Phys. 1982, 76, 1910
54. Raghavachari, K.; Trucks, G. W.; Pople, J. A.; Head-Gordon, M. Chem. Phys. Lett. 1989, 157, 479
55. Watts, J. D.; Gauss, J.; Bartlett, R. J. J. Chem. Phys. 1993, 98, 8718
56. Woon, D. E.; Dunning, T. H., Jr. J. Chem. Phys. 1995, 103, 4572
57. Peterson, K. A.; Dunning, T. H., Jr. J. Chem. Phys. 2002, 117, 10548
58. Craciun, R.; Picone, D.; Long, R. T.; Li, S.; Dixon, D. A.; Peterson, K. A.; Christe, K. O. Inorg. Chem. 2010, 49, 1056
59. Li, S.; Dixon, D. A. J. Phys. Chem. A 2010, 114, 2665
60. Peterson, K. A.; Woon, D. E.; Dunning, T. H., Jr. J. Chem. Phys. 1994, 100, 7410
61. Werner, H.-J.; Knowles, P. J.; Lindh, R.; Manby, F. R.; Schutz, M.; Celani, P.; Korona, T.; Mitrushenkov, A.; Rauhut, G.; Adler, T. B.; Amos, R. D.; Bernhardsson, A.; Berning, A.; Cooper, D. L.; Deegan, M. J. O.; Dobbyn, A. J.; Eckert, F.; Goll, E.; Hampel, C.; Hetzer, G.; Hrenar, T.; Knizia, G.; Köppl, C.; Liu, Y.; Lloyd, A. W.; Mata, R. A.; May, A. J.; McNicholas, S. J.; Meyer, W.; Mura, M. E.; Nicklass, A.; Palmieri, P.; Pflüger, K.; Pitzer, R.; Reiher, M.; Schumann, U.; Stoll, H.; Stone, A. J.; Tarroni, R.; Thorsteinsson, T.; Wang, M.; Wolf, A. MOLPRO, version 2008.1, a package of ab initio programs; Cardiff University, Cardiff, U.K., 2008. see http://www.molpro.net.
62. Ernstbrunner, E. E.; Hudec, J. J. Mol. Struct. 1973, 17, 249
63. Thomas, H. D.; Chen, K. H.; Allinger, N. L. J. Am. Chem. Soc. 1994, 116, 5887
64. McKean, D. C.; Ellis, I. A. J. Mol. Struct. 1975, 29, 81
65. Bohlmann, F. Angew. Chem. 1957, 69, 641
66. McKean, D. C.; Ellis, I. A. J. Mol. Struct. 1975, 29, 81
67. Thomas, H. D.; Chen, K. H.; Allinger, N. L. J. Am. Chem. Soc. 1994, 116, 5887
68. Soulet, A.; Duquesne, L.; Jursich, G.; Inman, R.; Misra, A.; Blasco, N.; Lachaud, C.; Marot, Y.; Prunier, R.; Vautier, M.; Anderson, S.; Clancy, R.; Havlicek, M. Semicond. Fabtech 2005, FT27.
69. Hausmann, D. M.; Kim, E.; Becker, J.; Gordon, R. G. Chem. Mater. 2002, 14, 4350
70. Stolkin, I.; Ha, T.-K.; Günthard, Hs. H. Chem. Phys. 1977, 21, 327
71. Yun, J. Y.; Park, M. Y.; Rhee, S. W. J. Electrochem. Soc. 1998, 145, 2453
72. Dai, M.; Wang, Y.; Kwon, J.; Halls, M. D.; Chabal, Y. J. Nat. Mater. 2009, 8, 825
73. Liu, Y. C.; Furukawa, K.; Gao, D. W.; Nakashima, H.; Uchino, K.; Muraoka, K. Appl. Surf. Sci. 1997, 121/122, 233
74. Khabashesku, V. N.; Boganov, S. E.; Kudin, K. N.; Margrave, J. L.; Nefedov, O. M. Organometallics 1998, 17, 5041
75. Li, K.; Dubey, S.; Bhandari, H. B.; Hu, Z.; Turner, C. H.; Klein, T. M. J. Vac. Sci.Technol., A 2007, 25, 1389
76. Jakob, P.; Chabal, Y. J.; Raghavachari, K.; Christman, S. B. Phys. Rev. B 1993, 47, 6839
77. Chisholm, M. H.; Extine, M. W. J. Am. Chem. Soc. 1977, 99, 792
78. Quignard, F.; Lecuyer, C.; Choplin, A.; Basset, J.-M. J. Chem. Soc., Dalton Trans. 1994, 7, 1153
79. Vidal, V.; Théolier, A.; Thivolle-Cazat, J.; Basset, J.-M. Science 1997, 276, 99
80. Chertihin, G. V.; Andrews, L. J. Phys. Chem. 1995, 99, 15004
81. Zhou, M.; Zhang, L.; Dong, J.; Qin, Q. J. Am. Chem. Soc. 2000, 122, 10680
82. Shimanouchi, T. Tables of Molecular Vibrational Frequencies Consolidated Vol. I; National Bureau of Standards: Washington, DC, 1972; pp 1 -160.
83. Neumayer, D. A.; Cartier, E. J. Appl. Phys. 2001, 90, 1801
84. Mui, C.; Han, J. H.; Wang, G. T.; Musgrave, C. B.; Bent, S. F. J. Am. Chem. Soc. 2002, 124, 4027
85. Stuart, B. Infrared Spectroscopy: Fundamentals and Applications; Wiley: New York, 2004.
86. Baldwin, C.; Lappert, M. F.; Pedley, J. B.; Poland, J. S. J. Chem. Soc., Dalton Trans. 1972, 18, 1943
87. We note that this precursor is likely to coat the quadrupole sensor, so a long exposure time is not recommended.
88. Luo, Y.-R. Comprehensive Handbook of Chemical Bond Energies; CRC Press: Boca Raton, FL, 2007.
89. Liu, X.; Ramanathan, S.; Longdergan, A.; Srivastava, A.; Lee, E.; Seidel, T. E.; Barton, J. T.; Pang, D.; Gordon, R. G. J. Electrochem. Soc. 2005, 152, G213
90. Mulliken, R. S. J. Chem. Phys. 1955, 23, 1833
91. Robertson, J.; Peacock, P. W. Microelectron. Eng. 2004, 72, 112
92. Steinfeld, J. I.; Francisco, J. S.; Hase, W. L. Chemical Kinetics and Dynamics, 2nd ed.; Prentice Hall: New York, 1999.