CO gas sensing by ultrathin tin oxide films grown by atomic layer deposition using transmission FTIR spectroscopy

Journal of Physical Chemistry A

Volumn 112, Issue 39, 2008, Pages 9211-9219

  Du, X ^a   Du, Y ^a   George, S M ^a  

^a UNIVERSITY OF COLORADO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD; ATOMIC LAYERS; CHARGE CONDUCTIONS; CO GAS SENSORS; CONSISTENT; ELECTRICAL CONDUCTIVITIES; FILM CONDUCTIVITIES; FOURIER TRANSFORM INFRARED; FTIR SPECTROSCOPIES; GAS PRESSURES; IN-SITU; INFRARED ABSORBANCE; OXYGEN SPECIES; REACTION PRODUCTS; SEMICONDUCTOR GAS SENSORS; SENSING; STATIC EXPERIMENTS; TIME-SCALE; TIN OXIDE FILMS; TRANSIENT EXPERIMENTS; VACANCY MODELS;

ATOMIC LAYER DEPOSITION; ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; ATOMS; CHEMICAL SENSORS; ELECTRIC CONDUCTIVITY; EXPERIMENTS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; GAS DETECTORS; GAS SENSING ELECTRODES; GASES; IN SITU PROCESSING; INFRARED SPECTROSCOPY; IONIZATION OF GASES; LITHIUM COMPOUNDS; NANOSTRUCTURED MATERIALS; OXYGEN; OXYGEN VACANCIES; PHYSICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; SEMICONDUCTOR MATERIALS; SENSOR NETWORKS; SENSORS; SILICON COMPOUNDS; TIN; TITANIUM COMPOUNDS; ULTRATHIN FILMS; VACANCIES;

OXIDE FILMS;

EID: 54249113344     PISSN: 10895639     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp800518v     Document Type: Article

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