Mechanisms of suboxide growth and etching in atomic layer deposition of tantalum oxide from TaCl 5 and H 2 O

Applied Surface Science

Volumn 103, Issue 4, 1996, Pages 331-341

  Aarik, Jaan ^a   Kukli, Kaupo ^a,b   Aidla, Aleks ^a   Pung, Lembit ^a  

^a UNIVERSITY OF TARTU   (Estonia)

^b UNIVERSITY OF HELSINKI   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CALCULATIONS; CHLORINE; DEPOSITION; ETCHING; FILM GROWTH; OXIDES; SENSORS; TANTALUM; TANTALUM COMPOUNDS; THIN FILMS; WATER;

ATOMIC LAYER DEPOSITION; CONTINUOUS PRECURSOR FLOW; QUARTZ CRYSTALLINE MASS SENSOR; SUBOXIDE GROWTH; SURFACE MASS EXCHANGE; TANTALUM OXIDE; TANTALUM PENTACHLORIDE;

SURFACE TREATMENT;

EID: 0030380571     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00554-5     Document Type: Article

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