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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 8, 1996, Pages 4476-4479

Atomic layer epitaxy growth of ZnSe on (100) GaAs using metalorganic vapor-phase epitaxy system

(1) Hsu, Chin Tsar a

a NATIONAL FORMOSA UNIVERSITY (Taiwan)

Author keywords

Atomic layer epitaxy (ALE); Growth cycle; Mirrorlike; Self limiting growth; ZnSe

Indexed keywords

ATOMIC LAYER EPITAXY; GROWTH CYCLE; MIRRORLIKE; SELF-LIMITING GROWTH;

ATOMIC PHYSICS; EXPERIMENTS; SELENIUM; SINGLE CRYSTALS; THIN FILMS; ZINC ALLOYS;

EPITAXIAL GROWTH;

EID: 0030205483 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.4476 Document Type: Article

Times cited : (5)

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