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Volumn 112, Issue , 1997, Pages 63-68
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In situ monitoring of hydrogen adsorption on (001) Ga surface in GaAs atomic layer epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
ADSORPTION;
ATOMS;
EPITAXIAL GROWTH;
HYDROGEN;
ISOTHERMS;
MATHEMATICAL MODELS;
MONITORING;
PHOTOCHEMICAL REACTIONS;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING GALLIUM ARSENIDE;
SURFACE PHENOMENA;
TEMPERATURE PROGRAMMED DESORPTION;
ATOMIC LAYER EPITAXY;
DISSOCIATIVE ISOTHERM;
IN SITU MONITORING;
LANGMUIR EQUATION;
SURFACE PHOTO ABSORPTION;
CHEMISORPTION;
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EID: 0031546925
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(96)00988-9 Document Type: Article |
Times cited : (7)
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References (16)
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