In situ study of atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC 2 H 5 ) 5 and H 2 O

Applied Surface Science

Volumn 112, Issue , 1997, Pages 236-242

  Kukli, Kaupo ^a   Aarik, Jaan ^a   Aidla, Aleks ^a   Siimon, Hele ^a   Ritala, Mikko ^b   Leskelä, Markku ^b  

^a UNIVERSITY OF TARTU   (Estonia)

^b UNIVERSITY OF HELSINKI   (Finland)

Author keywords

Atomic layer epitaxy; Quartz crystal microbalance; Tantalum ethoxide; Tantalum oxide

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; DEPOSITION; FILM GROWTH; OXIDES; PHASE INTERFACES; PYROLYSIS; SENSORS; SURFACE PHENOMENA; TANTALUM COMPOUNDS; THIN FILMS; WATER;

ATOMIC LAYER EPITAXY; QUARTZ CRYSTALLINE MASS SENSOR; TANTALUM ETHOXIDE;

EPITAXIAL GROWTH;

EID: 0031546947     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00989-0     Document Type: Article

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