In situ reaction mechanism studies on ozone-based atomic layer deposition of Al2O3 and HfO2

ACS Applied Materials and Interfaces

Volumn 2, Issue 2, 2010, Pages 347-350

  Rose, Martin ^a   Niinistö, Jaakko ^a,b   Endler, Ingolf ^a   Bartha, Johann W ^c   Kücher, Peter ^a   Ritala, Mikko ^b  

^a IKTS ^*  (Germany)

^b UNIVERSITY OF HELSINKI   (Finland)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Active oxygen; Atomic layer deposition; In situ; Ozone; Process monitoring; Quadrupole mass spectrometry

Indexed keywords

ACTIVE OXYGEN; IN-SITU; IN-SITU REACTIONS; METAL PRECURSOR; OH GROUP; QUADRUPOLE MASS SPECTROMETER; QUADRUPOLE MASS SPECTROMETRY; REACTION BYPRODUCTS; TETRAKIS; TRIMETHYLALUMINIUM;

ATOMIC LAYER DEPOSITION; ATOMS; HAFNIUM; HAFNIUM COMPOUNDS; IONIZATION OF GASES; MASS SPECTROMETRY; OZONE; PROCESS CONTROL; PROCESS MONITORING;

OZONE LAYER;

EID: 77957951107     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am900807a     Document Type: Article

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