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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 10, 2001, Pages 6065-6068

Indium-based interface chemical engineering by electrochemistry and atomic layer deposition for copper indium diselenide solar cells

(10) Guillemoles, Jean François a Canava, Bruno a Yousfi, El Bekkaye a Cowache, Pierre a Galtayries, Anouk b Asikainen, Timo c Powalla, Michael d Hariskos, Dimitri d Schock, Hans Werner e Lincot, Daniel a

a PSL RESEARCH UNIVERSITY (France)

b PSL RESEARCH UNIVERSITY (France)

c Microchemistry Ltd (Finland)

d ZENTRUM FÜR SONNENENERGIE UND WASSERSTOFF FORSCHUNG BADEN WÜRTTEMBERG ZSW (Germany)

e UNIVERSITY OF STUTTGART (Germany)

Author keywords

ALE; CIGS; Copper indium diselenide; Electrochemistry; Interface; Photovoltaics; Solar cells; Surface potential; Thin films; XPS

Indexed keywords

CHEMICAL ENGINEERING; COPPER COMPOUNDS; DEPOSITION; ELECTROCHEMISTRY; INDIUM; INTERFACES (MATERIALS); IONS; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION; COPPER INDIUM DISELENIDE SOLAR CELLS; INDIUM BASED INTERFACE CHEMICAL ENGINEERING; KELVIN PROBE; QUARTZ CRYSTAL MICROGRAVIMETRY; SURFACE PASSIVATION;

SOLAR CELLS;

EID: 0035485155 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.6065 Document Type: Article

Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.