Wet etching of GaN, AlN, and SiC: A review

Materials Science and Engineering R: Reports

Volumn 48, Issue 1, 2005, Pages 1-46

  Zhuang, D ^a   Edgar, J H ^a  

^a Sunflower Networking Group   (United States)

Author keywords

A1. Defect; A1. Etching; B1. Nitrides

Indexed keywords

ALUMINUM NITRIDE; ANISOTROPY; ATOMIC FORCE MICROSCOPY; CRYSTALLOGRAPHY; DIFFUSION; DISLOCATIONS (CRYSTALS); ELECTROLYTES; GALLIUM NITRIDE; GRAIN BOUNDARIES; MORPHOLOGY; NITRIDES; SILICON CARBIDE; SOLUTIONS; TRANSMISSION ELECTRON MICROSCOPY;

ETCH PIT DENSITY (EPD); ETCHING PARAMETERS; WET ETCHING; X-RAY TOPOGRAPHY (XRT);

ETCHING;

EID: 13444270826     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mser.2004.11.002     Document Type: Review

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