Microstructural and infrared optical properties of electrochemically etched highly doped 4H-SiC

Journal of Applied Physics

Volumn 87, Issue 12, 2000, Pages 8497-8503

  Zangooie, S ^a,c   Persson, P O A ^a   Hilfiker, J N ^b   Hultman, L ^a   Arwin, H ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b J A WOOLLAM CO INC   (United States)

^c UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000258973     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373569     Document Type: Article

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