TEM (XHREM) and EDX studies of GH-SiC porous layer as a substrate for subsequent homoepitaxial growth

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 271-274

  Sorokin, L M ^a   Hutchison, J L ^b   Sloan, J ^b   Mosina, G N ^a   Savkina, N S ^a   Shuman, V B ^a   Lebedev, A A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

Cross sectional TEM; EDX spectrum; Epitaxy; Porous layer characteristics; Porous SiC; Sublimation growth; Substrate defects

Indexed keywords

CRYSTALLINE MATERIALS; ENERGY DISPERSIVE SPECTROSCOPY; EPITAXIAL GROWTH; MICROSTRUCTURE; SILICON CARBIDE; STACKING FAULTS; AMORPHOUS SILICON; ELECTROCHEMICAL ETCHING; ELECTRON MICROSCOPES; HIGH RESOLUTION ELECTRON MICROSCOPY; SUBSTRATES;

CROSS-SECTIONAL TEM; EDX SPECTRUM; POROUS LAYER CHARACTERISTICS; SUBLIMATION GROWTH; SUBSTRATE DEFECTS; POROUS LAYERS; POROUS SIC;

TRANSMISSION ELECTRON MICROSCOPY; SILICON CARBIDE;

EID: 13444289775     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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