Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques

Materials Science and Engineering: B

Volumn 93, Issue 1-3, 2002, Pages 229-233

  Visconti, P ^a,b,c   Huang, D ^a   Reshchikov, M A ^a   Yun, F ^a   Cingolani, R ^b   Smith, D J ^d   Jasinski, J ^e   Swider, W ^e   Liliental Weber, Z ^e   Morkoc H ^a  

^a Virginia Commonwealth University   (United States)

^b NATIONAL NANOTECHNOLOGY LABORATORY   (Italy)

^c Istituto Per Lo Studio Di Nuovi Materiali Per l'Elettronica CNR   (Italy)

^d ARIZONA STATE UNIVERSITY   (United States)

^e LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Atomic force microscopy; Molecular beam epitaxy; Transmission electron microscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON DIFFRACTION; ETCHING; HIGH TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

COAXIAL IMPACT COLLISION ION SCATTERING SPECTROSCOPY; CONVERGENT BEAM ELECTRON DIFFRACTION (CBED);

GALLIUM NITRIDE;

EID: 0037198524     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00011-9     Document Type: Conference Paper

References (24)