Crystal quality evaluation by electrochemical preferential etching of p-type SiC crystals

Journal of the Electrochemical Society

Volumn 147, Issue 7, 2000, Pages 2744-2748

  Kayambaki, M ^a   Tsagaraki, K ^a   Cimalla, V ^a   Zekentes, K ^a   Yakimova, R ^b  

^a INSTITUTE OF COMPUTER SCIENCE   (Greece)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTROCHEMISTRY; MORPHOLOGY; SILICON CARBIDE;

ELECTROCHEMICAL ETCHING;

ETCHING;

EID: 0034228128     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393599     Document Type: Article

References (9)

1. W. von Münch, Landolt-Börnstein New Series, Vol-III/17c, p. 403, and references therein, Springer-Verlag, Berlin (1984).
2. R. Yakimova, A. L. Hylen, M. Tuominen, M. Syvajarvi, and E. Janzen, Diamond Relat. Mater., 6, 1456 (1997).
3. J. van de Langemat, D. Vanmaekelbergh, and J. J. Kelly, J. Appl. Phys., 83, 6089 (1998).
4. I. Lauermann, R. Memming, and D. Meissner, J. Electrochem. Soc., 144, 73 (1997).
5. J. S. Shor and A. D. Kurtz, J. Electrochem. Soc., 141, 778 (1994).
6. M. Kayambaki and K. Zekentes, in Proc. ICSCRM'99, Oct 1999, Raleigh, NC, To be published.
7. BIORAD PN 2400, Users Manual, Bio-Rad Microsystems Ltd., York YO31 8SD, U.K. (1989).
8. J. Takahashi, M. Kanaya, and Y. Fujiwara, J. Cryst. Growth, 135, 6 (1994).
9. V. D. Heydemann, G. S. Rohrer, E. K. Sanchez, and M. Skowronski, Mater. Sci. Forum, 264-268, 37 (1998).