Photoenhanced electrochemical etching for p-GaN

Electronics Letters

Volumn 36, Issue 1, 2000, Pages 88-90

  Yang, Jeon Wook ^a   Kim, Byung Mok ^a   Yoon, Chang Joo ^a   Yang, Gye Mo ^a   Lee Hyung Jae, ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

PHOTOENHANCED ELECTROCHEMICAL ETCHING;

SEMICONDUCTOR JUNCTIONS;

EID: 0033640369     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000036     Document Type: Article

References (7)

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2. LU, H., WU, Z., and BHAT, I.: 'Photoassisted anodic etching of gallium nitride', J. Electrochem. Soc., 1997, 144, (1), pp. L8-11
3. YOUTSEY, C., ADESIDA, I., and BULMAN, G.: 'Broad-area photoelectrochemical etching of GaN', Electron. Lett., 1997, 33, (3), pp. 245-246
4. MINSKI, M.S., WHITE, M., and HU, E.L.: 'Room temperature photoenhanced wet etching of GaN', Appl. Phys. Lett., 1996, 68, (11), pp. 1531-1533
5. PENG, L.-H., CHUNAKG, C.-W., HO, J.-K., HUANG, C.-N., and CHEN, C.-Y.: 'Deep ultraviolet enhanced wet chemical etching of galium nitride', Appl. Phys. Lett., 1998, 72, (8), pp. 939-941
6. YOUTSEY, C., ADESIDA, I., ROMANO, L.T., and BULMAN, G.: 'Smooth n-type GaN surfaces by photoenhanced were etching', Appl. Phys. Lett., 1998, 72, (5), pp. 560-562
7. YOUTSEY, C., ADESIDA, I., and BULMAN, G.: 'Highly anisotropic photoenhanced wet etching of n-type GaN', Appl. Phys. Lett., 1997, 71, (15), pp. 2151-2153