Strong morphological dependence of luminescence efficiency and emission wavelength in hexagonal GaN crystallites directly imaged by scanning cathodoluminescence microscopy

Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 165-169

  Bertram, F ^a   Christen, J ^a   Schmidt, M ^a   Topf, M ^b   Koymov, S ^b   Fischer, S ^b   Meyer, B ^b  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b JUSTUS LIEBIG UNIVERSITY   (Germany)

Author keywords

GaN crystallites; Local dislocation network; Luminescence

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); ENERGY GAP; IMAGING TECHNIQUES; LUMINESCENCE OF INORGANIC SOLIDS; MORPHOLOGY; OPTICAL MICROSCOPY;

EMISSION WAVELENGTH; HEXAGONAL GALLIUM NITRIDE CRYSTALLITES; LOCAL DISLOCATION NETWORKS; SCANNING CATHODOLUMINESCENCE MICROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0009376644     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00157-8     Document Type: Article

References (5)

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