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Journal of Crystal Growth

Volumn 182, Issue 1-2, 1997, Pages 17-22

Chemical polishing of bulk and epitaxial GaN

(4) Weyher, J L a Muller S a Grzegory, I b Porowski, S b

a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

b INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

Author keywords

Bulk crystals; Chemical polishing; Epitaxial layers; Etching; Gallium nitride

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CHEMICAL POLISHING; ETCHING; NITRIDES; SINGLE CRYSTALS; SURFACE TREATMENT;

EPITAXIAL LAYERS; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031334194 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00320-5 Document Type: Article

Times cited : (179)

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