Highly selective photoenhanced wet etching of GaN for defect investigation and device fabrication

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Visconti, P ^a   Reshchikov, M A ^a   Jones, K M ^a   Yun, F ^a   Wang, D F ^a   Cingolani, R ^a   Markoc H ^a   Litton, C W ^a   Molnar, R J ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); ELECTROCHEMISTRY; ETCHING; MOLECULAR BEAM EPITAXY; PHOTOCHEMICAL REACTIONS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

DISLOCATION DENSITY; HELIUM-CADMIUM LASER ILLUMINATION; PHOTOENHANCED ELECTRO-CHEMICAL WET ETCHING;

GALLIUM NITRIDE;

EID: 0035559533     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)