Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities

Applied Physics Letters

Volumn 83, Issue 17, 2003, Pages 3507-3509

  Tamulaitis, G ^a,e   Yilmaz, I ^a   Shur, M S ^a   Gaska, R ^b   Chen, C ^c   Yang, J ^c   Kuokstis, E ^c,e   Khan, A ^c   Schujman, S B ^d   Schowalter, L J ^d  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^c UNIVERSITY OF SOUTH CAROLINA   (United States)

^d Crystal IS Inc   (United States)

^e VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CARRIER CONCENTRATION; CRYSTAL GROWTH; ENERGY DISSIPATION; ENERGY GAP; GALLIUM NITRIDE; MATHEMATICAL MODELS; PHASE TRANSITIONS; PHOTOLUMINESCENCE;

CARRIER HEATING;

SINGLE CRYSTALS;

EID: 0242415190     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1623322     Document Type: Article

References (15)

1. L. Liu and J. H. Edgar, Mater. Sci. Eng., R. 37, 61 (2002).
2. L. J. Schowalter, Y. Shusterman, R. Wang, I. Bhat, G. Arunmozhi, and G. A. Slack, Appl. Phys. Lett. 76, 985 (2000).
3. J. C. Rojo, G. A. Slack, K. Morgan, B. Raghothamachar, M. Dudley, and L. J. Schowalter, J. Cryst. Growth 231, 317 (2001).
4. G. A. Slack, J. Phys. Chem. Solids 34, 321 (1973).
5. G. A. Slack and T. McNelly, J. Cryst. Growth 34, 263 (1976); 42, 560 (1977).
6. G. A. Slack and T. McNelly, J. Cryst. Growth 34, 263 (1976); 42, 560 (1977).
7. R. Gaska, C. Chen, J. Yang, E. Kuokstis, A. Khan, G. Tamulaitis, I. Yilmaz, M. S. Shur, J. C. Rojo, and L. J. Schowalter, Appl. Phys. Lett. 81, 4658 (2002).
8. E. S. Hellman, MRS Internet J. Nitride Semicond. Res. 3, 11 (1998).
9. S. F. Chichibu, A. Setoguchi, A. Uedono, K. Yoshimura, and M. Sumiya, Appl. Phys. Lett. 78, 28 (2001).
10. V. Kirilyuk, A. R. A. Zauner, P. C. M. Christianen, J. L. Weyher, P. R. Hageman, and P. K. Larsen, Appl. Phys. Lett. 76, 2355 (2000).
11. P. Prystawko, M. Leszczynski, B. Beaumont, P. Gibart, E. Frayssinet, W. Knap, P. Wisniewski, M. Bockowski, T. Suski, and S. Porowski, Phys. Status Solidi B 210, 437 (1998).
12. S. Juršenas, G. Tamulaitis, G. Kurilčik, and A. Žukauskas, Appl. Phys. Lett. 72, 241 (1998).
13. J. Shah, Solid-State Electron. 21, 43 (1978).
14. J. Y. Duboz, J. Appl. Phys. 92, 4312 (2002).
15. G. Tamulaitis, A. Zukauskas, J. W. Yang, M. A. Khan, M. S. Shur, and R. Gaska, Appl. Phys. Lett. 75, 2277 (1999).