Characteristics of the GaN polar surface during an etching process in KOH solution

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 357-362

  Li, Dongsheng ^a,b   Sumiya, M ^a   Yoshimura, K ^a   Suzuki, Y ^a   Fukuda, Y ^a   Fuke, S ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; FILM PREPARATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL MICROSCOPY; POTASSIUM COMPOUNDS; SURFACES;

COAXIAL IMPACT COLLISION ION SCATTERING SPECTROSCOPY; GALLIUM NITRIDE POLAR SURFACE; POLARITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034224183     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<357::AID-PSSA357>3.0.CO;2-F     Document Type: Article

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